Quantum-mechanical effects in nanometer scale MuGFETs
暂无分享,去创建一个
Jean-Pierre Colinge | Se Re Na Yun | Chong-Gun Yu | Jong-Tea Park | J. Colinge | S. Yun | Chong Gun Yu | Jong-Tae Park | Jong Tae Park
[1] M. Green. Intrinsic concentration, effective densities of states, and effective mass in silicon , 1990 .
[2] Karim Cherkaoui,et al. Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications , 2007 .
[3] Zhiping Yu,et al. Nanoscale FinFET simulation: A quasi-3D quantum mechanical model using NEGF , 2005 .
[4] J. R. Brews,et al. Quantum effects upon drain current in a biased MOSFET , 1998 .
[5] J. Kavalieros,et al. High performance fully-depleted tri-gate CMOS transistors , 2003, IEEE Electron Device Letters.
[6] Jean-Pierre Colinge,et al. Device design guidelines for nano-scale MuGFETs , 2007 .
[7] N. Mori,et al. Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs , 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.
[8] Jong-Tea Park,et al. Pi-Gate SOI MOSFET , 2001, IEEE Electron Device Letters.
[9] Y. Yeo,et al. 25 nm CMOS Omega FETs , 2002, Digest. International Electron Devices Meeting,.
[10] A. Asenov,et al. Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[11] V. Trivedi,et al. Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs , 2005, IEEE Electron Device Letters.
[12] R. N. Dexter,et al. Effective Masses of Electrons in Silicon , 1954 .
[13] C.R. Cleavelin,et al. Quantum-mechanical effects in trigate SOI MOSFETs , 2006, IEEE Transactions on Electron Devices.
[14] J. Colinge,et al. Silicon-on-insulator 'gate-all-around device' , 1990, International Technical Digest on Electron Devices.
[15] O. Faynot,et al. Multiple gate devices: advantages and challenges , 2005 .
[16] Bogdan Majkusiak,et al. Semiconductor thickness effects in the double-gate SOI MOSFET , 1998 .
[17] M. Shin. Efficient simulation of silicon nanowire field effect transistors and their scaling behavior , 2007 .
[18] S. Horiguchi,et al. Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs , 1993, IEEE Electron Device Letters.
[19] B. Majkusiak,et al. Analysis of the MOS transistor based on the self-consistent solution to the Schrodinger and Poisson equations and on the local mobility model , 1998 .
[20] Chenming Hu,et al. Sub 50-nm FinFET: PMOS , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).