P-i-N diode chip temperature extraction method by investigation into maximum recovery current rate di/dt
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Xiangning He | Guodong Chen | Haoze Luo | Yufei Dong | Zuyi Dong | Enxing Yang | Wuhua Li | Pengfei Sun
[1] J. Peralta,et al. Detailed and Averaged Models for a 401-Level MMC–HVDC System , 2012, IEEE Transactions on Power Delivery.
[2] P.M. Fabis,et al. Thermal modeling of diamond-based power electronics packaging , 1999, Fifteenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (Cat. No.99CH36306).
[3] Seung-Ki Sul,et al. On-line estimation of IGBT junction temperature using on-state voltage drop , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).
[4] F. Pfirsch,et al. Limiting Factors of the Safe Operating Area for Power Devices , 2013, IEEE Transactions on Electron Devices.
[5] C Mark Johnson,et al. Real-Time Compact Thermal Models for Health Management of Power Electronics , 2010, IEEE Transactions on Power Electronics.
[6] H. Kuhn,et al. On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters , 2009, 2009 13th European Conference on Power Electronics and Applications.
[7] Bin Wu,et al. Recent Advances and Industrial Applications of Multilevel Converters , 2010, IEEE Transactions on Industrial Electronics.
[8] Michel Mermet-Guyennet,et al. Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current , 2006, Microelectron. Reliab..
[9] M. Liserre,et al. Thermal Analysis of Multilevel Grid-Side Converters for 10-MW Wind Turbines Under Low-Voltage Ride Through , 2013, IEEE Transactions on Industry Applications.
[10] J. D. van Wyk,et al. Power electronics technology at the dawn of a new century-past achievements and future expectations , 2000 .
[11] Wolfgang Fichtner,et al. New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions , 2006, Microelectron. Reliab..
[12] L. Ran,et al. Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence , 2011, IEEE Transactions on Power Electronics.
[13] B. Jayant Baliga,et al. Fundamentals of Power Semiconductor Devices , 2008 .
[14] L. Dupont,et al. Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review , 2012, IEEE Transactions on Power Electronics.