Efficiency enhancements in crystalline silicon solar cells by alloying with germanium

[1]  Martin A. Green,et al.  24% efficient silicon solar cells , 1990, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

[2]  T. Manku,et al.  Lattice mobility of holes in strained and unstrained Si/sub 1-x/Ge/sub x/ alloys , 1991, IEEE Electron Device Letters.

[3]  P. Agnello,et al.  Selective growth of silicon‐germanium alloys by atmospheric‐pressure chemical vapor deposition at low temperatures , 1991 .

[4]  T. Tang,et al.  Monte Carlo calculation of strained and unstrained electron mobilities in Si1−xGex using an improved ionized‐impurity model , 1991 .

[5]  M. Green,et al.  Low-temperature growth of silicon on Si1-xGex by liquid phase epitaxy , 1991 .

[6]  J. Cressler,et al.  Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors , 1991, IEEE Electron Device Letters.

[7]  Sturm,et al.  Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells. , 1991, Physical review letters.

[8]  J. Werner,et al.  Liquid‐phase epitaxy and characterization of Si1−xGex layers on Si substrates , 1990 .

[9]  H. Trah Liquid phase epitaxy in the ternary system Si-Ge-Bi , 1990 .

[10]  Keith W. J. Barnham,et al.  A new approach to high‐efficiency multi‐band‐gap solar cells , 1990 .

[11]  M. Green Intrinsic concentration, effective densities of states, and effective mass in silicon , 1990 .

[12]  A. Tanaka,et al.  Growth of GeSi thick alloy layers by the yo-yo solute feeding method , 1990 .

[13]  J. Sturm,et al.  Band‐gap shifts in silicon‐germanium heterojunction bipolar transistors , 1989 .

[14]  E. Bauser,et al.  Growth of Si1−xGex on silicon by liquid‐phase epitaxy , 1987 .

[15]  People Erratum: Indirect band gap of coherently strained GexSil-x bulk alloys on <001> silicon substrates , 1985, Physical review. B, Condensed matter.

[16]  John C. Bean,et al.  Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures , 1985 .

[17]  R. People,et al.  Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures , 1985 .