Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers
暂无分享,去创建一个
Johann Peter Reithmaier | Alfred Forchel | S. Deubert | Frank Klopf | A. Forchel | J. Reithmaier | F. Klopf | S. Deubert
[1] Andreas Stintz,et al. Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .
[2] Th. Forster,et al. High‐power operation of strained InGaAs/AlGaAs single quantum well lasers , 1991 .
[3] Michel Calligaro,et al. High-performance 980 nm quantum dot lasers for high-power applications , 2001 .
[4] Johann Peter Reithmaier,et al. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers , 2000 .
[5] Dieter Bimberg,et al. Gain and Threshold of Quantum Dot Lasers: Theory and Comparison to Experiments , 1997 .
[6] H. Ishikawa,et al. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots , 2000, IEEE Journal of Quantum Electronics.
[7] Andreas Stintz,et al. Low-threshold quantum dot lasers with 201 nm tuning range , 2000 .
[8] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[9] Nikolai N. Ledentsov,et al. 3.9 W CW power from sub-monolayer quantum dot diode laser , 1999 .
[10] Johann Peter Reithmaier,et al. High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers , 1998 .
[11] Johann Peter Reithmaier,et al. High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer , 1999 .
[12] Nikolai N. Ledentsov,et al. InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition , 1997 .