In the Global 450mm Equipment Development Consortium (G450C), a 193i guided directed self-assembly (DSA) pattern has been used to create structures at the 14nm node and below. The first guided DSA patterned wafer was ready for etch process development within a month of the G450C’s first 193i patterned wafer availability with one litho pass. Etch processes were scaled up from 300mm to 450mm for a 28nm pitch STI stack and a 40nm pitch M1 BEOL stack. The effects of various process parameters were investigated to fine tune each process. Overall process window has been checked and compared. Excellent process stability results were shown for current etch chambers.