论文信息 - Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

We report on the microwave operation of 1 /spl mu/m gate AlGaN/GaN doped channel heterostructure field effect transistors (DC-HFET's) with the cutoff frequency f/sub T/ of 18.3 GHz. These devices exhibit the cutoff frequency-gate length product in excess of 18 GHz/spl middot//spl mu/m, comparable to that of the state-of-the-art GaAs MESFET's. We explain these improvements in the device performance by the increased sheet carrier density in the device channel and by a reduction in the parasitic series resistances, caused by doping the device channel.

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