论文信息 - Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs

Compact models for real device effects in FinFETs: Quantum-mechanical confinement and double junctions in FinFETs

A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.

[1] K. Yahashi,et al. Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[2] E. Villaseñor. Introduction to Quantum Mechanics , 2008, Nature.

[3] V. Trivedi,et al. Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs , 2005, IEEE Electron Device Letters.

[4] Ali M. Niknejad,et al. BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations , 2012 .

[5] J. G. Fossum,et al. Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs , 2002 .