An optimum design of high‐power amplifier with high efficiency using a realizable harmonic loading circuit

An optimum design approach for a highly efficient power amplifier (PA) using a packaged high-power device is described.Large fundamental load impedance assisted by a simple second harmonic manipulation is explored to improve the efficiency when maintaining the power density. For demonstration of the performance, the PA is implemented using GaN HEMT device at 2.655 GHz. In the experiment, the fabricated PA achieves power-added efficiency (PAE) of 64.3% at the saturated output power of 49.2 dBm. For 802.16e mobile worldwide interoperability for microwave access signal, the PA delivers the PAE of ∼31% and ACLR of −49 dBc at the 10 dB backed-off power of 40 dBm after the digital feedback predistortion linearization. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:818–822, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25032

[1]  Franco Giannini,et al.  High efficiency low-voltage power amplifier design by second-harmonic manipulation , 2000 .

[2]  S. Sano,et al.  A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz , 2006, 2006 European Microwave Integrated Circuits Conference.

[3]  Jangheon Kim,et al.  Analysis of Adaptive Digital Feedback Linearization Techniques , 2010, IEEE Transactions on Circuits and Systems I: Regular Papers.

[4]  S. C. Cripps,et al.  RF Power Amplifiers for Wireless Communications , 1999 .

[5]  M.J. Poulton,et al.  High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[6]  S. Sano,et al.  A 40W GaN HEMT Doherty Power Amplifier with 48% Efficiency for WiMAX Applications , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[7]  Jaehyok Yi,et al.  Adaptive Digital Feedback Predistortion Technique for Linearizing Power Amplifiers , 2007, IEEE Transactions on Microwave Theory and Techniques.

[8]  J. D. Brown,et al.  150 W GaN-on-Si RF power transistor , 2005, IMS 2005.