Transistor Electronics: Imperfections, Unipolar And Analog Transistors
暂无分享,去创建一个
[1] William Shockley,et al. p − n Junction Transistors , 1951 .
[2] W. Shockley,et al. Hot electrons in germanium and Ohm's law , 1951 .
[3] W. V. Roosbroeck. Theory of the flow of electrons and holes in germanium and other semiconductors , 1950 .
[4] William Shockley,et al. The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..
[5] J. A. Morton. Present Status of Transistor Development , 1952, Proceedings of the IRE.
[6] W. E. Kock,et al. Metallic delay lenses , 1948, Bell Syst. Tech. J..
[7] E. Conwell. Properties of Silicon and Germanium: II , 1952, Proceedings of the IRE.
[8] W. Shockley,et al. Mobilities of Electrons in High Electric Fields , 1951 .
[9] W. Shockley. Theories of High Values of Alpha for Collector Contacts on Germanium , 1950 .
[10] Conyers Herring. Theory of transient phenomena in the transport of holes in an excess semiconductor , 1949, Bell Syst. Tech. J..
[11] The Junction Transistor , 1952 .
[12] W. J. Pietenpol,et al. Some Circuit Properties and Applications of n-p-n Transistors , 1951, Proceedings of the IRE.
[13] W. Shockley,et al. A Unipolar "Field-Effect" Transistor , 1952, Proceedings of the IRE.
[14] F. S. Goucher.. The Photon Yield of Electron-Hole Pairs in Germanium , 1950 .
[15] W. Shockley,et al. Observations of Zener Current in Germanium p-n Junctions , 1951 .
[16] Winston E. Kock,et al. Refracting Sound Waves , 1949 .
[17] J. Early. Effects of Space-Charge Layer Widening in Junction Transistors , 1952, Proceedings of the IRE.
[19] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .
[20] L. Schimpf,et al. A Junction Transistor Tetrode for High-Frequency Use , 1952, Proceedings of the IRE.
[21] William Shockley,et al. The Mobility and Life of Injected Holes and Electrons in Germanium , 1951 .
[22] R. Hall. Electron-Hole Recombination in Germanium , 1952 .
[23] J. Bardeen,et al. Physical Principles Involved in Transistor Action , 1949 .
[24] J. H. Crawford,et al. The Effect of Fast Neutron Bombardment on the Electrical Properties of Germanium , 1951 .
[25] E. Buehler,et al. Single-Crystal Germanium , 1952, Proceedings of the IRE.
[26] A. Gibson. The Absorption Spectra of Single Crystals of Lead Sulphide, Selenide and Telluride , 1952 .
[27] C. Hogarth,et al. LETTERS TO THE EDITOR: Crystal Diode and Triode Action in Lead Selenide , 1950 .
[28] J. R. Haynes,et al. Investigation of Hole Injection in Transistor Action , 1949 .
[29] E. Buehler,et al. Growth of Germanium Single Crystals Containingp−nJunctions , 1951 .
[30] C. Zener. A theory of the electrical breakdown of solid dielectrics , 1934 .