Transistor Electronics: Imperfections, Unipolar And Analog Transistors

The electronic mechanisms that are of chief interest in transistor electronics are discussed from the point of view of solid-state physics. The important concepts of holes, electrons, donors, acceptors, and deathnium (recomibination center for holes and electrons) are treated from a unified viewpoint as imperfections in a nearly perfect crystal. The behavior of an excess electron as a negative particle moving with random thermal motion and drifting in an electric field is described in detail. A hole is similar to an electron in all regards save sign of charge. Some fundamental experiments have been performed with transistor techniques and exhibit clearly the behavior of holes and electrons. The interactions of holes, electrons, donors, acceptors, and deathnium give rise to the properties of p-n junctions, p-n junction transistors, and Zener diodes. Point-contact transistors are not understood as well from a fundamental viewpoint. A new class of unipolar transistors is discussed. Of these, the analog transistor is described in terms of analogy to a vacuum tube.

[1]  William Shockley,et al.  p − n Junction Transistors , 1951 .

[2]  W. Shockley,et al.  Hot electrons in germanium and Ohm's law , 1951 .

[3]  W. V. Roosbroeck Theory of the flow of electrons and holes in germanium and other semiconductors , 1950 .

[4]  William Shockley,et al.  The theory of p-n junctions in semiconductors and p-n junction transistors , 1949, Bell Syst. Tech. J..

[5]  J. A. Morton Present Status of Transistor Development , 1952, Proceedings of the IRE.

[6]  W. E. Kock,et al.  Metallic delay lenses , 1948, Bell Syst. Tech. J..

[7]  E. Conwell Properties of Silicon and Germanium: II , 1952, Proceedings of the IRE.

[8]  W. Shockley,et al.  Mobilities of Electrons in High Electric Fields , 1951 .

[9]  W. Shockley Theories of High Values of Alpha for Collector Contacts on Germanium , 1950 .

[10]  Conyers Herring Theory of transient phenomena in the transport of holes in an excess semiconductor , 1949, Bell Syst. Tech. J..

[11]  The Junction Transistor , 1952 .

[12]  W. J. Pietenpol,et al.  Some Circuit Properties and Applications of n-p-n Transistors , 1951, Proceedings of the IRE.

[13]  W. Shockley,et al.  A Unipolar "Field-Effect" Transistor , 1952, Proceedings of the IRE.

[14]  F. S. Goucher. The Photon Yield of Electron-Hole Pairs in Germanium , 1950 .

[15]  W. Shockley,et al.  Observations of Zener Current in Germanium p-n Junctions , 1951 .

[16]  Winston E. Kock,et al.  Refracting Sound Waves , 1949 .

[17]  J. Early Effects of Space-Charge Layer Widening in Junction Transistors , 1952, Proceedings of the IRE.

[19]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[20]  L. Schimpf,et al.  A Junction Transistor Tetrode for High-Frequency Use , 1952, Proceedings of the IRE.

[21]  William Shockley,et al.  The Mobility and Life of Injected Holes and Electrons in Germanium , 1951 .

[22]  R. Hall Electron-Hole Recombination in Germanium , 1952 .

[23]  J. Bardeen,et al.  Physical Principles Involved in Transistor Action , 1949 .

[24]  J. H. Crawford,et al.  The Effect of Fast Neutron Bombardment on the Electrical Properties of Germanium , 1951 .

[25]  E. Buehler,et al.  Single-Crystal Germanium , 1952, Proceedings of the IRE.

[26]  A. Gibson The Absorption Spectra of Single Crystals of Lead Sulphide, Selenide and Telluride , 1952 .

[27]  C. Hogarth,et al.  LETTERS TO THE EDITOR: Crystal Diode and Triode Action in Lead Selenide , 1950 .

[28]  J. R. Haynes,et al.  Investigation of Hole Injection in Transistor Action , 1949 .

[29]  E. Buehler,et al.  Growth of Germanium Single Crystals Containingp−nJunctions , 1951 .

[30]  C. Zener A theory of the electrical breakdown of solid dielectrics , 1934 .