论文信息 - Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence - 字舞流文

Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence

D. N. Bose | P. Banerji | B. R. Chakraborty | S. Bhunia | M. Chhetri | Y. Aparna

[1] D. N. Bose,et al. Transmission electron microscopy and X-ray diffraction studies of quantum wells , 1999 .

[2] S. Hofmann,et al. Determination and application of the depth resolution function in sputter profiling with secondary ion mass spectroscopy and Auger electron spectroscopy , 1998 .

[3] K. Wittmaack. Artifacts in low-energy depth profiling using oxygen primary ion beams: Dependence on impact angle and oxygen flooding conditions , 1998 .

[4] M. Sanyal,et al. Interfacial profile of a Bragg Mirror , 1998 .

[5] Y. Homma,et al. Depth profiling of an In0.53Ga0.47As/InP multilayer sample using grazing‐incidence sputtered neutral mass spectrometry with laser post‐ionization , 1998 .

[6] A. Benninghoven,et al. Secondary ion mass spectrometry : SIMS V : proceedings of the fifth international conference, Washington, DC, September 30-October 4, 1985 , 1986 .

[7] Gerald B. Stringfellow,et al. Organometallic Vapor-Phase Epitaxy , 1989 .