论文信息 - Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices

Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices

The superlattice film with the periodical thin film layers of Sb2Te3/GeTe used as a phase change memory was studied for deposition in the crystal phase. We successfully fabricated the superlattice structure with the sputtering temperature of 200 °C. Moreover, the pillar structure with the size of 70 nm was dry-etched using a HBr/Ar gas mixture.

[1] A. Pirovano,et al. Non-volatile memory technologies: emerging concepts and new materials , 2004 .

[2] Bond-Selective Excitation and Following Displacement of Ge Atoms in GeTe/Sb2Te3Superlattice , 2012 .

[3] J. Tominaga,et al. Understanding the phase-change mechanism of rewritable optical media , 2004, Nature materials.

[4] H.-S. Philip Wong,et al. Phase Change Memory , 2010, Proceedings of the IEEE.

[5] Yoshihisa Fujisaki,et al. Current Status of Nonvolatile Semiconductor Memory Technology , 2010 .

[6] Role of Ge Switch in Phase Transition: Approach using Atomically Controlled GeTe/Sb2Te3 Superlattice , 2008 .

[7] J. Tominaga,et al. What is the Origin of Activation Energy in Phase-Change Film? , 2009 .

[8] Byung Joon Choi,et al. Switching Power Reduction in Phase Change Memory Cell Using CVD Ge2Sb2Te5 and Ultrathin TiO2 Films , 2009 .

[9] Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb2Te3 superlattices , 2009, 1011.3585.

[10] M. Lankhorst,et al. Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.

[11] You Yin,et al. Low-Reset-Current Ring-Confined-Chalcogenide Phase Change Memory , 2012 .

[12] R. Ahuja,et al. Topological insulating in GeTe/Sb2Te3 phase-change superlattice. , 2012, Physical review letters.

[13] Sung-Min Yoon,et al. Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask , 2006 .