论文信息 - Nanosecond laser pulses inducing melting of Si+-implanted SiO2

Nanosecond laser pulses inducing melting of Si+-implanted SiO2

The author analyses the physical processes involved in laser irradiating Si+-implanted SiO2. In particular he discusses the laser light absorption phenomena and estimates an upper limit for the value of the delay time in energy transfer from Si-implanted impurities to the SiO2 lattice. The role of a delay time in the thermal behaviour of the SiO2 lattice is quantitatively analysed.

A. Miotello

[1] N. Itoh,et al. Evidence for solid-phase migration of Si atoms in laser-irradiated, Si+-implanted SiO2 , 1989 .

[2] A. Miotello. LETTER TO THE EDITOR: The Soret effect in laser-irradiated quartz (liquid phase) , 1989 .

[3] N. Itoh,et al. Laser‐induced reemission of silicon atoms implanted into quartz , 1988 .

[4] Cohen,et al. Matrix atomic losses and oxygen incorporation under ruby-laser irradiation of silicon in gaseous atmospheres. , 1986, Physical review. B, Condensed matter.

[5] H. Kurz,et al. Phenomenology of picosecond heating and evaporation of silicon surfaces coated with SiO2 layers , 1984 .

[6] R. E. Harrington. Application of the Theory of Heat Conduction to the Absorption of Blackbody Radiation , 1967 .