Photodetectors for optical communication systems
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[1] Wolfgang W. Gärtner,et al. Depletion-Layer Photoeffects in Semiconductors , 1959 .
[2] C. M. Wolfe,et al. GaAs SCHOTTKY BARRIER AVALANCHE PHOTODIODES , 1969 .
[3] A new germanium photodiode with extended long-wavelength response. , 1970, Applied optics.
[4] R. Baertsch. Noise and ionization rate measurements in silicon photodiodes , 1966 .
[5] L. D’asaro,et al. MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA‐FREE CARRIER MULTIPLICATION , 1965 .
[6] R. King,et al. Photoconductive Indium Antimonide Detectors , 1965 .
[7] W. M. Sharpless. Evaluation of a Specially Designed GaAS Schottky-Barrier Photodiode Using 6328-A Radiation Modulated at 4 GHz. , 1970, Applied optics.
[8] P. Kruse. Photon Effects in Hg 1− x Cdx Te , 1965 .
[9] G. Picus. Carrier generation and recombination processes in copper-doped germanium photoconductors , 1962 .
[10] R. Baertsch,et al. Zinc sulfide Schottky barrier ultra-violet detectors , 1969 .
[11] H. Levinstein,et al. Infrared Properties of Gold in Germanium , 1960 .
[12] J. Geusic,et al. A unidirectional traveling-wave optical maser , 1962 .
[13] B. F. Williams,et al. NEW HIGH-GAIN DYNODE FOR PHOTOMULTIPLIERS. , 1968 .
[14] R. J. McIntyre,et al. Comparison of photomultipliers and avalanche photodiodes for laser applications , 1970 .
[15] V. Corcoran. Directional Characteristics in Optical Heterodyne Detection Processes. II , 1965 .
[16] W. T. Read,et al. A proposed high-frequency, negative-resistance diode , 1958 .
[17] T. Harman,et al. PHOTOCONDUCTIVITY IN SINGLE‐CRYSTAL Pb1−xSnx Te , 1968 .
[18] H. Graham,et al. A comparison of the performance of copper-doped germanium and mercury-doped germanium detectors , 1963 .
[19] Anthony E. Siegman,et al. The antenna properties of optical heterodyne receivers , 1966 .
[20] F. Arams,et al. 5.2 - Infrared 10.6-micron heterodyne detection with gigahertz IF capability , 1967 .
[21] D. E. Sawyer,et al. Narrow Base Germanium Photodiodes , 1958, Proceedings of the IRE.
[22] M. V. Schneider,et al. Schottky barrier photodiodes with antireflection coating , 1966 .
[23] R. L. Williams,et al. Response Characteristics of Extrinsic Photoconductors , 1969 .
[24] James R. Biard,et al. A model of the avalanche photodiode , 1967 .
[25] P. Coleman,et al. Mixing and detection of coherent light in a bulk photoconductor , 1964 .
[26] M. Fisher,et al. A traveling-wave photomultiplier , 1966 .
[27] R. M. Matheson. Recent Photomultiplier Developments at RCA , 1964 .
[28] Photoconductive Time Constants and Related Characteristics of p-Type Gold-Doped Germanium , 1961 .
[29] J. Yardley,et al. RESPONSE TIMES OF Ge:Cu INFRARED DETECTORS , 1965 .
[30] R. A. Logan,et al. Ionization Rates of Holes and Electrons in Silicon , 1964 .
[31] Gerald C. Huth,et al. A NEW IONIZING RADIATION DETECTION CONCEPT WHICH EMPLOYS SEMICONDUCTOR AVALANCHE AMPLIFICATION AND THE TUNNEL DIODE ELEMENT , 1966 .
[32] J. J. Scheer,et al. GaAs-Cs: A new type of photoemitter , 1965 .
[33] E. Fuls. OPTICAL FREQUENCY MIXING IN PHOTOCONDUCTIVE InSb , 1964 .
[34] E. Putley. Far Infra-Red Photoconductivity , 1964, September 1.
[35] Noise in high speed avalanche photodiodes , 1965 .
[36] I. Melngailis. LASER ACTION AND PHOTODETECTION IN LEAD-TIN CHALCOGENIDES , 1968 .
[37] K. Johnson,et al. High-speed photodiode signal enhancement at avalanche breakdown voltage , 1965 .
[38] T. Bridges,et al. Up-conversion of 10.6 µ radiation to the visible and second harmonic generation in HgS , 1968 .
[39] O. Svelto,et al. Solid-state photodetection: A comparison between photodiodes and photoconductors , 1964 .
[40] G. D. Boyd,et al. Infrared Detection by Optical Mixing , 1969 .
[41] R. Miller,et al. Secondary-emission amplification at microwave frequencies , 1965 .
[42] H. Kogelnik,et al. Considerations of noise and schemes for its reduction in laser amplifiers , 1964 .
[43] Infrared laser preamplifier system , 1965 .
[44] H. Sommers,et al. Demodulation of low-level broad-band optical signals with semiconductors , 1963 .
[45] A. Johnson. Square law behavior of photocathodes at high light intensities and high frequencies , 1965 .
[46] R. P. Riesz. High Speed Semiconductor Photodiodes , 1962 .
[47] Malvin C. Teich,et al. Infrared heterodyne detection , 1968 .
[48] T. Bridges,et al. PULSE RESPONSE OF ELECTRO‐OPTIC MODULATORS AND PHOTOCONDUCTIVE DETECTORS AT 10.6 μ , 1968 .
[49] G. Lucovsky,et al. Coherent light detection in solid-state photodiodes , 1963 .
[50] D. E. Charlton,et al. Background limited photoconductive HgCdTe detectors for use in the 8–14 micron atmospheric window , 1969 .
[51] Y. Klinger,et al. Infrared 10.6-micron CW up-conversion in proustite using an Nd:YAG laser pump , 1969 .
[52] R. Mcintyre. Multiplication noise in uniform avalanche diodes , 1966 .
[53] W. Pratt. Laser Communication Systems. , 1969 .
[54] R. Redington. Gain Band-Width Product of Photoconductors , 1959 .
[55] A. M. Glass,et al. Investigation of the Electrical Properties of Sr1−xBaxNb2O6 with Special Reference to Pyroelectric Detection , 1969 .
[56] H. Melchior,et al. Signal and noise response of high speed germanium avalanche photodiodes , 1966 .
[57] H. Levinstein,et al. Preparation and Properties of Mercury‐Doped Germanium , 1962 .
[58] H. W. Ruegg,et al. An optimized avalanche photodiode , 1967 .
[59] R. D. Baertsch,et al. An Ag–GaAs Schottky‐Barrier Ultraviolet Detector , 1969 .
[60] W. Kaiser,et al. Infrared Absorption in P-Type Germanium , 1953 .
[61] B. Pajot,et al. Metallurgy and physical properties of mercury-doped germanium related to the performances of the infrared detector☆ , 1967 .
[62] A. Kohn,et al. 1-2 micron (Hg, Cd)Te photodetectors , 1969 .
[63] T. M. Quist. Copper-doped germanium detectors , 1968 .
[64] D. Long. On generation-recombination noise in infrared detector materials , 1967 .
[65] E. Snitzer,et al. Detection with a fiber laser preamplifier at 1.06 µ , 1969 .
[66] L. K. Anderson,et al. High-speed photodetectors , 1966 .
[67] R. E. Burgess. The Statistics of Charge Carrier Fluctuations in Semiconductors , 1956 .
[68] D. Sokoloff,et al. EXTENSION OF LASER HARMONIC‐FREQUENCY MIXING TECHNIQUES INTO THE 9 μ REGION WITH AN INFRARED METAL‐METAL POINT‐CONTACT DIODE , 1969 .
[69] R. Baertsch. Noise and Multiplication Measurements in InSb Avalanche Photodiodes , 1967 .
[70] R. Soref. Extrinsic ir Photoconductivity of Si Doped with B, Al, Ga, P, As, or Sb , 1967 .
[71] Malvin C. Teich,et al. OPTIMUM HETERODYNE DETECTION AT 10.6 μm IN PHOTOCONDUCTIVE Ge:Cu , 1966 .
[72] H. Sonnenberg. InAsP–Cs2O, A HIGH‐EFFICIENCY INFRARED‐PHOTOCATHODE , 1970 .
[73] J. Warner. PHOTOMULTIPLIER DETECTION OF 10.6 μm RADIATION USING OPTICAL UP‐CONVERSION IN PROUSTITE , 1968 .
[74] A. Yariv,et al. Quantum Fluctuations and Noise in Parametric Processes. I. , 1961 .
[75] A. Hadni,et al. Response of a Triglycine Sulphate Pyroelectric Detector to High Frequencies (300 kHz) , 1969 .
[76] F. Arams,et al. Infrared 10.6-µm photodiode heterodyne detection , 1970 .
[77] H. Mocker. A 10.6-micro Optical Heterodyne Communication System. , 1969, Applied optics.
[78] C. Buczek,et al. HETERODYNE PERFORMANCE OF MERCURY DOPED GERMANIUM , 1967 .
[79] D. Fried,et al. Optical heterodyning with noncritical angular alignment , 1963 .
[80] J. Schmit,et al. Temperature and Alloy Compositional Dependences of the Energy Gap of Hg1−xCdxTe , 1969 .
[81] C. Vérié,et al. CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORS , 1967 .
[82] R. Pantell,et al. Photoconductive Mixing in CdSe Single Crystals , 1963 .
[83] Charles Freed,et al. OPTICAL HETERODYNE DETECTION AT 10.6 μm OF THE BEAT FREQUENCY BETWEEN A TUNABLE Pb0.88Sn0.12Te DIODE LASER AND A CO2 GAS LASER , 1968 .
[84] H. Levinstein,et al. Cooled photoconductive infrared detectors , 1959 .
[85] A. Calawa,et al. PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODES , 1966 .
[86] K. M. van Vliet,et al. Noise in Semiconductors and Photoconductors , 1958 .
[87] J. E. Midwinter,et al. Up‐Conversion of Near Infrared to Visible Radiation in Lithium‐meta‐Niobate , 1967 .
[88] A A Turnbull,et al. Photoemission from GaAs-Cs-O , 1968 .
[89] R. Bell,et al. Improved photoemitters using GaAs and InGaAs , 1968 .
[90] W. Shockley,et al. A Theory of Noise for Electron Multipliers , 1938, Proceedings of the Institute of Radio Engineers.
[91] M. Kimmitt,et al. The use of a pyroelectric detector to measure Q-switched CO 2 laser pulses , 1968 .
[92] R. B. Emmons,et al. Avalanche‐Photodiode Frequency Response , 1967 .
[93] B. F. Williams. InGaAs–CsO, A LOW WORK FUNCTION (LESS THAN 1.0 eV) PHOTOEMITTER , 1969 .
[94] W. Engeler,et al. A status report on infrared detectors , 1961 .
[95] A maximum-signal theorem for the spatially coherent detection of scattered radiation , 1967 .
[96] F. D. Shepherd,et al. A 1 to 2 µm silicon avalanche photodiode , 1970 .
[97] Y. Marfaing,et al. 9B3 - Semiconductor lasers and fast detectors in the infrared (3 to 15 microns) , 1966 .
[98] B. M. Oliver. Thermal and quantum noise , 1965 .
[99] O. E. DeLange,et al. Optical heterodyne detection , 1968, IEEE Spectrum.
[100] A. Glass,et al. PHOTOMIXING AT 10.6μ WITH STRONTIUM BARIUM NIOBATE PYROELECTRIC DETECTORS , 1969 .
[101] A. Siegman,et al. Photomixing Experiments with a Ruby Optical Maser and a Traveling-Wave Microwave Phototube , 1962 .
[102] B. Peyton,et al. G-R Noise for auger band-to-band processes∗ , 1971 .
[103] W. Saur. Long wavelength mercury-cadmium telluride photoconductive infrared detectors†☆ , 1968 .
[104] G. Lucovsky,et al. The frequency response of avalanching photodiodes , 1966 .
[105] H. Sommers,et al. Demodulation of low-level broad-band optical signals with semiconductors: Part II—Analysis of the photoconductive detector , 1964 .
[106] S. Jacobs,et al. Narrowband optical heterodyne detection. , 1967, Applied optics.
[107] R. Bell,et al. PHOTOEMISSION FROM InP‐Cs‐O , 1968 .