Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs

In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.

[1]  V. Pala,et al.  Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[2]  T. Kimoto,et al.  Progress in ultrahigh-voltage SiC devices for future power infrastructure , 2014, 2014 IEEE International Electron Devices Meeting.

[3]  S. Bhattacharya,et al.  Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications , 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

[4]  Alex Q. Huang,et al.  Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer application , 2010, 2010 IEEE Energy Conversion Congress and Exposition.