A Roadmap Toward 24% Efficient PERC Solar Cells in Industrial Mass Production

Many manufacturers choose the passivated emitter and rear cell (PERC) approach in order to surpass the 20% cell efficiency level in mass production. In this paper, we study the efficiency potential of the PERC approach under realistic assumptions for incremental improvements of existing technologies by device simulations. Based on the most recent published experimental results, we find that the PERC structure is able to reach about 24% cell efficiency in mass production by an ongoing sequence of incremental improvements. As a guideline for future developments, we provide a method to improve cell efficiency most effectively by monitoring the current losses at the maximum power point. By means of numerical device modeling, we identify some key technologies toward 24% efficient PERC cells and provide its technology-related target requirements.

[1]  M. Green,et al.  Spatially resolved analysis and minimization of resistive losses in high-efficiency Si solar cells , 1996 .

[2]  R. Köhler,et al.  Loss analysis of 22% efficient industrial PERC solar cells , 2017 .

[3]  B. Lim,et al.  Realistic efficiency potential of next‐generation industrial Czochralski‐grown silicon solar cells after deactivation of the boron–oxygen‐related defect center , 2016 .

[4]  P. Altermatt,et al.  Formation of aluminum–oxygen complexes in highly aluminum-doped silicon , 2010 .

[5]  G. Hahn,et al.  Comparison of BO Regeneration Dynamics in PERC and Al-BSF Solar Cells☆ , 2015 .

[6]  A. Cuevas,et al.  Surface recombination velocity of highly doped n‐type silicon , 1996 .

[7]  Determination of the Effective Optical Width of Screen-Printed and Aerosol-Printed and Plated Fingers , 2008 .

[8]  Karsten Bothe,et al.  Lifetimes exceeding 1 ms in 1-Ω cm boron-doped Cz-silicon , 2014 .

[9]  B. Tjahjono,et al.  Optimizing CELCO Cell Technology in One Year of Mass Production , 2013 .

[10]  H. Kurz,et al.  Comparison of large area high ohmic emitter silicon solar cells with standard screen-printed contacts , 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

[11]  K. Bothe,et al.  Fine-Line Printed 5 Busbar PERC Solar Cells with Conversion Efficiencies Beyond 21% , 2014 .

[12]  P. Alkemade,et al.  BORON DOPING OF SILICON USING COALLOYING WITH ALUMINIUM , 1994 .

[13]  P. Altermatt,et al.  Front Metal Finger Inhomogeneity: Its Influence on Optimization and on the Cell Efficiency Distribution in Production Lines , 2016 .

[14]  P. Altermatt,et al.  Analysis of recombination losses in screen-printed aluminum-alloyed back surface fields of silicon solar cells by numerical device simulation , 2014 .

[15]  Giso Hahn,et al.  Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation , 2016 .

[16]  M. Green,et al.  22.8% efficient silicon solar cell , 1989 .

[17]  S. Wenham,et al.  Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model , 2016 .

[18]  A. Blakers Shading losses of solar‐cell metal grids , 1992 .

[19]  S. Glunz,et al.  Improved quantitative description of Auger recombination in crystalline silicon , 2012 .

[20]  Jan Schmidt,et al.  Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review , 2016, IEEE Journal of Photovoltaics.

[21]  Andreas Wolf,et al.  Precise parameterization of the recombination velocity at passivated phosphorus doped surfaces , 2016 .

[22]  M. Glatthaar,et al.  A Predictive Optical Simulation Model for the Rear-Surface Roughness of Passivated Silicon Solar Cells , 2013, IEEE Journal of Photovoltaics.

[23]  Giso Hahn,et al.  DETAILED ANALYSIS OF HIGH SHEET RESISTANCE EMITTERS FOR SELECTIVELY DOPED SILICON SOLAR CELLS , 2009 .

[24]  Nico Wöhrle,et al.  Optical Modeling of the Rear Surface Roughness of Passivated Silicon Solar Cells , 2012 .

[25]  Martin A. Green,et al.  The Passivated Emitter and Rear Cell (PERC): From conception to mass production , 2015 .

[26]  G. Hahn,et al.  From simulation to experiment: Understanding BO-regeneration kinetics , 2015 .

[27]  Naoteru Matsubara,et al.  Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell , 2014, IEEE Journal of Photovoltaics.

[28]  Thomas G. Allen,et al.  Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge , 2015 .

[29]  Gerd Fischer,et al.  Sensitivity Analysis of Industrial Multicrystalline PERC Silicon Solar Cells by Means of 3-D Device Simulation and Metamodeling , 2014, IEEE Journal of Photovoltaics.

[30]  Pietro P. Altermatt,et al.  Models for numerical device simulations of crystalline silicon solar cells—a review , 2011 .

[31]  A. Herguth,et al.  Enhanced Stable Regeneration of High Efficiency Cz PERC Cells , 2015 .

[32]  Wmm Erwin Kessels,et al.  Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 , 2006 .

[33]  P. Altermatt,et al.  Adapted parameterization of incomplete ionization in aluminum-doped silicon and impact on numerical device simulation , 2015 .

[34]  Jürgen Schumacher,et al.  Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters , 2002 .

[35]  R. Brendel,et al.  High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells , 2011 .

[36]  Andreas Wolf,et al.  Modelling carrier recombination in highly phosphorus-doped industrial emitters , 2011 .

[37]  D. Biro,et al.  Status and Perspective of Emitter Formation by POCl3-Diffusion , 2015 .

[38]  Heinrich Kurz,et al.  Heavily doped Si:P emitters of crystalline Si solar cells: recombination due to phosphorus precipitation , 2014 .

[39]  M. Hermle,et al.  Effect of incomplete ionization for the description of highly aluminum-doped silicon , 2011 .

[40]  Matthias Müller Reporting Effective Lifetimes at Solar Cell Relevant Injection Densities , 2016 .

[41]  Heiko Steinkemper,et al.  Input Parameters for the Simulation of Silicon Solar Cells in 2014 , 2015, IEEE Journal of Photovoltaics.