Optical properties of (Ga2Se3)0.75 – (Ga2S3)0.25 single crystals by spectroscopic ellipsometry

[1]  M. Isik,et al.  Spectroscopic ellipsometry investigation of optical properties of β-Ga2S3 single crystals , 2018, Optical Materials.

[2]  Emily F. Smith,et al.  Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe , 2018, 2D Materials.

[3]  A. Qasrawi,et al.  Design and Characterization of the Ge/Ga2S3 Heterojunction , 2017, Journal of Electronic Materials.

[4]  C. Ho,et al.  Synthesis of In2S3 and Ga2S3 crystals for oxygen sensing and UV photodetection , 2016 .

[5]  A. Nassiopoulou,et al.  Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting , 2015 .

[6]  Zhiming Huang,et al.  Ga2S3: Optical properties and perspectives for THz applications , 2015, 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

[7]  C. Ho,et al.  Optically decomposed near-band-edge structure and excitonic transitions in Ga2S3 , 2014, Scientific Reports.

[8]  Chin Sheng Chua,et al.  Epitaxial Synthesis, Band Offset, and Photoelectrochemical Properties of Cubic Ga2S3 Thin Films on GaAs (111) Substrates , 2014 .

[9]  Xiao-Ming Jiang,et al.  Two phases of Ga2S3: promising infrared second-order nonlinear optical materials with very high laser induced damage thresholds , 2013 .

[10]  R. Turan,et al.  Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals , 2012 .

[11]  S. C. Sharma,et al.  Structural, EPR, photo and thermoluminescence properties of ZnO:Fe nanoparticles , 2012 .

[12]  Sarath D. Gunapala,et al.  Chapter 2 – Quantum Well Infrared Photodetectors , 2011 .

[13]  A. M. Chaparro,et al.  Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition , 2010 .

[14]  V. Sanjosé,et al.  Above-bandgap ordinary optical properties of GaSe single crystal , 2009 .

[15]  J. R. Fermin,et al.  Optical properties of CuIn5Se8 and CuGa5Se8 from ellipsometric measurements , 2009 .

[16]  A. Bekheet.  Ac conductivity and dielectric properties of Ga2S3–Ga2Se3 films , 2008 .

[17]  F. Yakuphanoglu.  Electrical conductivity, optical and metal–semiconductor contact properties of organic semiconductor based on MEH-PPV/fullerene blend , 2008 .

[18]  K. F. A. El-Rahman,et al.  Charge conduction mechanisms and photovoltaic properties of n -(Ga2S3 -Ga2Se3)/p -Si heterojunctions , 2007 .

[19]  H. Fujiwara,et al.  Spectroscopic Ellipsometry: Principles and Applications , 2007 .

[20]  Ching-Hwa Ho,et al.  Crystal structure and electronic structure of GaSe1−xSx series layered solids , 2005 .

[21]  O. Madelung.  Semiconductors: Data Handbook , 2003 .

[22]  L. Martínez,et al.  Blue photoluminescence of a-Ga2S3 and a-Ga2S3:Fe2+ single crystals , 2003 .

[23]  I. Zedan,et al.  Determination and analysis of optical constants for Ga2Se3 films near absorption edge , 2003 .

[24]  M. León,et al.  Optical properties of chalcopyrite CuAlxIn1−xSe2 alloys , 2000 .

[25]  Sadao Adachi,et al.  Optical Properties of Crystalline and Amorphous Semiconductors , 1999 .

[26]  C. Julien,et al.  Vibrational studies of copper thiogallate solid solutions , 1999 .

[27]  M. Z. Kovalyuk,et al.  p-GaSe-n-Ga2S3 heterojunctions , 1997 .

[28]  I. Volovichev,et al.  THE HETEROCONTACT OF TWO INTRINSIC SEMICONDUCTORS AND RADIATION-STABLE ELECTRONICS , 1995 .

[29]  A. A. El-Shazly,et al.  Heat treatment effect on the structural and optical properties of Ga2Se3-Ga2S3 thin films , 1992 .

[30]  Ryuichi Mori,et al.  Phase Study on Binary System Ga-Se , 1974 .

[31]  M. DiDomenico,et al.  Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials , 1971 .

[32]  Jacques I. Pankove,et al.  Optical Processes in Semiconductors , 1971 .

[33]  A. Ward,et al.  Raman spectroscopy of sulfur, sulfur-selenium, and sulfur-arsenic mixtures , 1968 .

[34]  W. Spitzer,et al.  Determination of Optical Constants and Carrier Effective Mass of Semiconductors , 1957 .