The characterization of etched GaAs surface with HCl or H3PO4 solutions

[1]  Hyung‐Ho Park,et al.  Pretreatment of GaAs (001) for sulfur passivation with (NH4)2Sx , 1996 .

[2]  S. Soss,et al.  Epitaxial quality of thin Ag films on GaAs(100) surfaces cleaned with various wet etching techniques , 1996 .

[3]  Y. Hirota.  Effects of dissolved oxygen in a de‐ionized water treatment on GaAs surface , 1994 .

[4]  Werner Kern,et al.  Handbook of Semiconductor Wafer Cleaning Technology: Science, Technology, and Applications , 1994 .

[5]  Masayuki Miyashita,et al.  Dependence of Thin Oxide Films Quality on Surface Micro-Roughness , 1991, 1991 Symposium on VLSI Technology.

[6]  Yoshikazu Homma,et al.  Monoatomic step observation on Si(111) surfaces by force microscopy in air , 1991 .

[7]  J. J. Lee,et al.  Surface composition and structure changes in GaAs compounds due to low‐energy Ar+ ion bombardment , 1989 .

[8]  E. Sacher,et al.  A surface analytical study of GaAs(100) cleaning procedures , 1989 .

[9]  Y. Nannichi,et al.  Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2 , 1988 .

[10]  Jean Massies,et al.  Substrate chemical etching prior to molecular‐beam epitaxy: An x‐ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4‐H2O2‐H2O solution , 1985 .

[11]  J. Wager,et al.  Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors , 1985 .

[12]  P. Hahn,et al.  The Si–SiO2 interface: Correlation of atomic structure and electrical properties , 1984 .

[13]  B. F. Lewis,et al.  Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy , 1983 .

[14]  K. Ploog.  Molecular Beam Epitaxy of III-V Compounds: Technology and Growth Process , 1981 .

[15]  R. Bachrach,et al.  Morphological defects arising during MBE growth of GaAs , 1981 .

[16]  Y. Mori,et al.  A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its Kinetics , 1978 .

[17]  P. Pianetta,et al.  Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements , 1977 .

[18]  I. Suemune,et al.  X‐ray photoelectron spectroscopy and atomic force microscopy surface study of GaAs(100) cleaning procedures , 1995 .

[19]  S. Ghandhi.  VLSI fabrication principles : sil-icon and gallium arsenide , 1994 .

[20]  Hyung-Moo Park,et al.  2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency , 1994 .

[21]  P. Notten,et al.  Etching of III-V semiconductors : an electrochemical approach , 1991 .

[22]  H. Hartnagel,et al.  Experimental data on light emission behaviour from GaAs Schottky contacts , 1982 .