Numerical analysis of optically pumped VECSELs

Carrier transport and optical properties of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) have been analyzed with the aid of the self-consistent numerical model. An influence of active-region design parameters, such as its length as well as number and arrangement of quantum wells, on a carrier distribution and material gain has been investigated. Moreover, a performance of various structures has been compared with the aid of a simple optical model. In particular, increasing number of quantum wells has been found not always to lead to an increasing maximal output power. An arrangement of quantum wells is also of importance. For example, quantum wells located in long active regions far from a chip surface can be not sufficiently pumped. Numerical models described in this paper may give an opportunity to understand more deeply details of VECSEL operation and to design optimal laser structures.

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