Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys

We report a study of band gap energies and bowing parameters of all possible families of ternary and quaternary nitride alloys. The experimental band gap energies (Eg) measured by photoluminescence, optical transmission and reflection methods, were strain-corrected in order to obtain for every sample the unstrained value of its Eg. For AlxGa1–xN the bowing parameter is equal to 1 eV, but the alloys InxGa1–xN and InxAl1–xN exhibited strong dependence of the bowing parameter on alloy composition. Finally, we investigated many quaternaries alloys InxAlyGa1–x –yN and we observed that the bowing parameter appears also to be very sensitive on In content. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

[1]  M. Androulidaki,et al.  Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence , 2002, International Conference on Molecular Bean Epitaxy.

[2]  Eugene E. Haller,et al.  Small band gap bowing in In1−xGaxN alloys , 2002 .

[3]  P. Paskov,et al.  Optical properties of InN—the bandgap question , 2005 .

[4]  V. V. Emtsev,et al.  Acceptor states in the photoluminescence spectra of n-InN , 2005 .

[5]  Yen-Kuang Kuo,et al.  Band-Gap Bowing Parameter of the AlxGa1-xN Derived from Theoretical Simulation , 2002 .

[6]  K. B. White,et al.  The Burstein-Moss shift for mercury cadmium telluride , 1987 .

[7]  Friedhelm Bechstedt,et al.  Phase diagram, chemical bonds, and gap bowing of cubic InxAl1−xN alloys: Ab initio calculations , 2002 .

[8]  Wladek Walukiewicz,et al.  Universal bandgap bowing in group III nitride alloys , 2003 .

[9]  Jerry R. Meyer,et al.  Band parameters for III–V compound semiconductors and their alloys , 2001 .

[10]  L. Romano,et al.  Effect of composition on the band gap of strained InxGa1−xN alloys , 2003 .

[11]  M. Schilfgaarde,et al.  Effects of biaxial strain and chemical ordering on the band gap of InGaN , 2001 .

[12]  Satoshi Kamiyama,et al.  Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy , 2003 .

[13]  B. A. Unger,et al.  Laser‐Machining Thin‐Film Electrode Arrays on Quartz Crystal Substrates , 1969 .

[14]  R. Martin,et al.  Exciton localization and the Stokes’ shift in InGaN epilayers , 1999 .

[15]  M. Ferhat.  Computational optical band gap bowing of III–V semiconductors alloys , 2004 .

[16]  H. Morkoç,et al.  Energy band bowing parameter in AlxGa1-xN alloys , 2002 .

[17]  Robert M. Biefeld,et al.  The band-gap bowing of AlxGa1−xN alloys , 1999 .