III-V nitrides—important future electronic materials
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[1] Shuji Nakamura,et al. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm , 1997 .
[2] Inspec,et al. Properties of group III nitrides , 1994 .
[3] S. Nakamura,et al. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .
[4] C. Kuo,et al. ACTIVATION ENERGIES OF SI DONORS IN GAN , 1996 .
[5] W. J. Choyke,et al. Cathodoluminescence of AlN–GaN short period superlattices , 1996 .
[6] M. Asif Khan,et al. Metastability and persistent photoconductivity in Mg‐doped p‐type GaN , 1996 .
[7] M. Asif Khan,et al. Metal semiconductor field effect transistor based on single crystal GaN , 1993 .
[8] Greiner,et al. p- and n-type cubic GaN epilayers on GaAs. , 1996, Physical review. B, Condensed matter.
[9] The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures , 1998 .
[10] Masahiko Shimada,et al. Preparation of GaN single crystals using a Na flux , 1997 .
[11] Akira Sakai,et al. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy , 1997 .
[12] M. S. Skolnick,et al. Observation of a many-body edge singularity in quantum well luminescence spectra. , 1987, Physical review letters.
[13] Oliver Brandt,et al. High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant , 1996 .
[14] B. Monemar,et al. Properties of Zn‐doped VPE‐grown GaN. I. Luminescence data in relation to doping conditions , 1980 .
[15] V. Härle,et al. Relaxation of thermal strain in GaN epitaxial layers grown on sapphire , 1997 .
[16] Lester F. Eastman,et al. Scattering of electrons at threading dislocations in GaN , 1998 .
[17] H. Amano,et al. Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well , 1997 .
[18] S. Sakai,et al. Nucleation Control in the Growth of Bulk GaN by Sublimation Method , 1997 .
[19] S. Nakamura. InGaN/AlGaN blue-light-emitting diodes , 1995 .
[20] J. Bergman,et al. Influence of potential fluctuations on electrical transport and optical properties in modulation-doped G a N / A l 0.28 Ga 0.72 N heterostructures , 1998 .
[21] Kovalev,et al. Properties of the yellow luminescence in undoped GaN epitaxial layers. , 1995, Physical review. B, Condensed matter.
[22] C. T. Foxon,et al. Lattice parameters of gallium nitride , 1996 .
[23] R. D. Metcalfe,et al. Growth and properties of GaxAl1-xN compounds , 1978 .
[24] R. Davis,et al. Sublimation growth and characterization of bulk aluminum nitride single crystals , 1997 .
[25] Marc Ilegems,et al. Luminescence of Be‐ and Mg‐doped GaN , 1973 .
[26] Isamu Akasaki,et al. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells , 1997 .
[27] Seoung-Hwan Park,et al. Optical gain of strained hexagonal and cubic GaN quantum‐well lasers , 1996 .
[28] M. Nardelli,et al. Theory of interfaces and surfaces in wide-gap nitrides , 1997 .
[29] J. Zolper,et al. Hydrogen passivation of Ca acceptors in GaN , 1996 .
[30] H. Morkoç,et al. Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics , 1996 .
[31] S. Nakamura,et al. Biaxial strain dependence of exciton resonance energies in wurtzite GaN , 1997 .
[32] J. Hutchby,et al. Photoluminescence of ion‐implanted GaN , 1976 .
[33] Kwiseon Kim,et al. Electronic and optical properties of the group-III nitrides, their heterostructures and alloys , 1995 .
[34] K. Reimann,et al. Two-photon spectroscopy in GaN , 1997 .
[35] S. Pearton,et al. Photoluminescence, reflectance, and magnetospectroscopy of shallow excitons in GaN , 1997 .
[36] Vladimir Dmitriev,et al. ELECTRIC BREAKDOWN IN GAN P-N JUNCTIONS , 1996 .
[37] Shuji Nakamura,et al. Recombination dynamics of localized excitons in In 0.20 Ga 0.80 N- In 0.05 Ga 0.95 N multiple quantum wells , 1997 .
[38] Takashi Mukai,et al. High-Power GaN P-N Junction Blue-Light-Emitting Diodes , 1991 .
[39] C. Walle,et al. Small valence-band offsets at GaN/InGaN heterojunctions , 1997 .
[40] S. Pearton,et al. Outdiffusion of deuterium from GaN, AlN, and InN , 1995 .
[41] Bo Monemar,et al. Luminescence in epitaxial GaN : Cd , 1974 .
[42] J. Bergman,et al. Exciton Lifetimes in GaN , 1995 .
[43] W. Knap,et al. Determination of the effective mass of GaN from infrared reflectivity and Hall effect , 1996 .
[44] A. Koukitu,et al. Thermodynamic analysis of the MOVPE growth of InxGa1-xN , 1997 .
[45] J. Pankove,et al. Epitaxially grown AlN and its optical band gap , 1973 .
[46] A. Koukitu,et al. Vapor phase epitaxy of InN using InCl and InCl3 sources , 1997 .
[47] J. Bernholc,et al. Amphoteric properties of substitutional carbon impurity in GaN and AlN , 1996 .
[48] H. Amano,et al. The growth of thick GaN film on sapphire substrate by using ZnO buffer layer , 1993 .
[49] Chang-Hee Hong,et al. Magnesium acceptor levels in GaN studied by photoluminescence , 1998 .
[50] Bernard Gil,et al. Raman determination of phonon deformation potentials in α-GaN , 1996 .
[51] J. Pankove,et al. Chapter 9 Doping in the III-Nitrides , 1997 .
[52] Tanakorn Osotchan,et al. Electron mobilities in gallium, indium, and aluminum nitrides , 1994 .
[53] Theodore D. Moustakas,et al. Metal contacts to gallium nitride , 1993 .
[54] J. Bergman,et al. Optical characterisation of GaN and related materials , 1997 .
[55] E. Haller,et al. PRESSURE INDUCED DEEP GAP STATE OF OXYGEN IN GAN , 1997 .
[56] Noble M. Johnson,et al. Growth of gallium nitride by hydride vapor-phase epitaxy , 1997 .
[57] Krüger,et al. Strain-related phenomena in GaN thin films. , 1996, Physical review. B, Condensed matter.
[58] D. Chadi,et al. Stability of deep donor and acceptor centers in GaN, AlN, and BN , 1997 .
[59] C. T. Foxon,et al. Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy , 1997 .
[60] Michael S. Shur,et al. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates , 1998 .
[61] M. Tlaczala,et al. Preparation of InN epitaxial layers in InCl3NH3 system , 1977 .
[62] Piotr Perlin,et al. Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer , 1994 .
[63] W. J. Moore,et al. Zeeman spectroscopy of shallow donors in GaN , 1997 .
[64] H. K. Ng,et al. Magneto‐optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance , 1996 .
[65] Briggs,et al. Native defects in gallium nitride. , 1995, Physical review. B, Condensed matter.
[66] Harris,et al. Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells. , 1995, Physical review. B, Condensed matter.
[67] Shuji Nakamura,et al. The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .
[68] J. Bergman,et al. PHOTOLUMINESCENCE RELATED TO THE TWO-DIMENSIONAL ELECTRON GAS AT A GAN/ALGAN HETEROINTERFACE , 1996 .
[69] B. Monemar,et al. Properties of Zn‐doped VPE‐grown GaN. II. Optical cross sections , 1980 .
[70] N. Newman,et al. p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg , 1994 .
[71] J. Pankove,et al. Properties of Zn‐doped GaN. I. Photoluminescence , 1974 .
[72] Harold M. Manasevit,et al. Single-crystal gallium arsenide on insulating substrates , 1968 .
[73] Robert F. Davis,et al. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy , 1997 .
[74] B. Monemar,et al. Variation of lattice parameters in GaN with stoichiometry and doping , 1979 .
[75] David P. Bour,et al. Spatial distribution of the luminescence in GaN thin films , 1996 .
[76] Michael Kunzer,et al. Nature of the 2.8 eV photoluminescence band in Mg doped GaN , 1998 .
[77] B. Šantić,et al. Ionized donor bound excitons in GaN , 1997 .
[78] Van de Walle CG,et al. Hydrogen in GaN: Novel aspects of a common impurity. , 1995, Physical review letters.
[79] Michael Kneissl,et al. Metastability of Oxygen Donors in AlGaN , 1998 .
[80] Hadis Morkoç,et al. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy , 1996 .
[82] Masahiko Sano,et al. CONTINUOUS-WAVE OPERATION OF INGAN/GAN/ALGAN-BASED LASER DIODES GROWN ON GAN SUBSTRATES , 1998 .
[83] Marco Buongiorno Nardelli,et al. Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1−xGaxN multiple quantum wells , 1997 .
[84] B. Monemar. Chapter 11 Optical Properties of GaN , 1997 .
[85] Joan M. Redwing,et al. A near‐field scanning optical microscopy study of the photoluminescence from GaN films , 1996 .
[86] S. Chichibu,et al. Growth and characterization of cubic GaN , 1997 .
[87] A. Nurmikko,et al. TOPICAL REVIEW: Blue and green semiconductor lasers: a status report , 1997 .
[88] M. Shur,et al. Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface , 1997 .
[89] J. J. Tietjen,et al. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .
[90] K. Hiramatsu,et al. Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy , 1994 .
[91] Theeradetch Detchprohm,et al. Shallow donors in GaN—The binding energy and the electron effective mass , 1995 .
[92] K. Korona,et al. POLARITON EFFECTS IN REFLECTANCE AND EMISSION SPECTRA OF HOMOEPITAXIAL GAN , 1997 .
[93] Sven Öberg,et al. Theory of Threading Edge and Screw Dislocations in GaN , 1997 .
[94] J. Bergman,et al. INTRINSIC OPTICAL PROPERTIES OF GAN EPILAYERS GROWN ON SIC SUBSTRATES : EFFECT OF THE BUILT-IN STRAIN , 1996 .
[95] D. C. Reynolds,et al. Identification of an ionized-donor-bound-exciton transition in GaN , 1997 .
[96] R. Molnar,et al. Strain determination in heteroepitaxial GaN , 1997 .
[97] J. W. Matthews,et al. Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .
[98] M.A. Khan,et al. 0.12-μm gate III-V nitride HFET's with high contact resistances , 1997, IEEE Electron Device Letters.
[99] M. Shur,et al. Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition , 1995 .
[100] Hadis Morkoç,et al. Emerging gallium nitride based devices , 1995, Proc. IEEE.
[101] Suski,et al. Towards the identification of the dominant donor in GaN. , 1995, Physical review letters.
[102] Paul A. Crowell,et al. Near-field scanning optical spectroscopy of an InGaN quantum well , 1998 .
[103] S. Denbaars,et al. Chapter 2 Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides , 1997 .
[104] K. Hiramatsu,et al. The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE , 1996 .
[105] Shun Lien Chuang,et al. k.p method for strained wurtzite semiconductors , 1996 .
[106] E. Ejder. Growth and morphology of GaN , 1974 .
[107] Henryk Temkin,et al. Low noise p-π-n GaN ultraviolet photodetectors , 1997 .
[108] Jörg Neugebauer,et al. Gallium vacancies and the yellow luminescence in GaN , 1996 .
[109] Eugene E. Haller,et al. On p-type doping in GaN—acceptor binding energies , 1995 .
[110] B. Monemar. Electronic structure and bound excitons for defects in semiconductors from optical spectroscopy , 1988 .
[111] J. Pankove,et al. High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter , 1996 .
[112] Hunter,et al. UV reflectivity of GaN: Theory and experiment. , 1995, Physical review. B, Condensed matter.
[113] Theeradetch Detchprohm,et al. Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN , 1995 .
[114] P. Vogl,et al. Electronic Structure of Biaxially-Strained Wurtzite Crystals GaN and AlN , 1996 .
[115] Michael Kunzer,et al. Determination of the GaN/AlN band offset via the (/0) acceptor level of iron , 1994 .
[116] Michael S. Shur,et al. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors , 1997 .
[117] Isamu Akasaki,et al. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE , 1990 .
[118] Hadis Morkoç,et al. Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy , 1994 .
[119] H. Amano,et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .
[120] Hadis Morkoç,et al. Chapter 8 Electronic and Optical Properties of III–V Nitride based Quantum Wells and Superlattices , 1997 .
[121] H. Amano,et al. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate , 1988 .
[122] D. Schikora,et al. The near band edge photoluminescence of cubic GaN epilayers , 1997 .
[123] B. Monemar,et al. Time-resolved spectroscopy of Zn- and Cd-doped GaN , 1987 .
[124] R. Street,et al. Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition , 1996 .
[125] Van de Walle CG,et al. Atomic geometry and electronic structure of native defects in GaN. , 1994, Physical review. B, Condensed matter.
[126] M. Shur,et al. The Velocity-Field Characteristic Of Indium Nitride , 1997 .
[127] G. A. Slack,et al. Growth of high purity AlN crystals , 1976 .
[128] Z. Liliental-Weber,et al. Nano-Tubes in GaN , 1996 .
[129] L. Dobrzyński,et al. Observation Of Native Ga Vacancies In Gan By Positron Annihilation , 1997 .
[130] H. Hovel,et al. Electrical and Optical Properties of rf‐Sputtered GaN and InN , 1972 .
[131] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[132] Bo Monemar,et al. Fundamental energy gap of GaN from photoluminescence excitation spectra , 1974 .
[133] T. Moustakas,et al. Thermal expansion of gallium nitride , 1994 .
[134] K. Vassilevski,et al. AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates , 1997 .
[135] Gil,et al. Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry. , 1995, Physical review. B, Condensed matter.
[136] P. Petroff,et al. Defect structure introduced during operation of heterojunction GaAs lasers , 1973 .
[137] Fischer,et al. New approach in equilibrium theory for strained layer relaxation. , 1994, Physical review letters.
[138] Yang,et al. Picosecond dynamics of excitons in cubic GaN. , 1995, Physical review. B, Condensed matter.
[139] Yongjo Park,et al. Excitation density dependence of photoluminescence in GaN:Mg , 1998 .
[140] Isamu Akasaki,et al. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters , 1997 .