The emergence of spin electronics in data storage.

Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.

[1]  L. Néel Anisotropie magnétique superficielle et surstructures d'orientation , 1954 .

[2]  W. Meiklejohn,et al.  New Magnetic Anisotropy , 1956 .

[3]  J. W. Brown Thermal Fluctuations of a Single-Domain Particle , 1963 .

[4]  Nevill Mott,et al.  Electrons in transition metals , 1964 .

[5]  Albert Fert,et al.  Two-Current Conduction in Nickel , 1968 .

[6]  J. Müller,et al.  Flat Ferromagnetic, Epitaxial 48Ni/52Fe(111) Films of few Atomic Layers , 1968 .

[7]  L. Berger,et al.  Prediction of a domain-drag effect in uniaxial, non-compensated, ferromagnetic metals , 1974 .

[8]  M. Julliere Tunneling between ferromagnetic films , 1975 .

[9]  Albert Fert,et al.  Electrical resistivity of ferromagnetic nickel and iron based alloys , 1976 .

[10]  Paulo P. Freitas,et al.  Observation of s‐d exchange force between domain walls and electric current in very thin Permalloy films , 1985 .

[11]  Peter Francis Carcia,et al.  Perpendicular magnetic anisotropy in Pd/Co thin film layered structures , 1985 .

[12]  C. Chappert,et al.  Ferromagnetism of very thin films of nickel and cobalt , 1986 .

[13]  Hong,et al.  Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice. , 1986, Physical review letters.

[14]  Schreiber,et al.  Layered magnetic structures: Evidence for antiferromagnetic coupling of Fe layers across Cr interlayers. , 1986, Physical review letters.

[15]  Etienne,et al.  Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. , 1988, Physical review letters.

[16]  Binasch,et al.  Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. , 1989, Physical review. B, Condensed matter.

[17]  Slonczewski Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier. , 1989, Physical review. B, Condensed matter.

[18]  Parkin,et al.  Oscillations in exchange coupling and magnetoresistance in metallic superlattice structures: Co/Ru, Co/Cr, and Fe/Cr. , 1990, Physical review letters.

[19]  S. Datta,et al.  Electronic analog of the electro‐optic modulator , 1990 .

[20]  C. Chappert,et al.  Oscillatory coupling between ferromagnetic layers separated by a nonmagnetic metal spacer. , 1991, Physical review letters.

[21]  Gurney,et al.  Giant magnetoresistive in soft ferromagnetic multilayers. , 1991, Physical review. B, Condensed matter.

[22]  Kelly,et al.  Prediction and confirmation of perpendicular magnetic anisotropy in Co/Ni multilayers. , 1992, Physical review letters.

[23]  Fert,et al.  Theory of the perpendicular magnetoresistance in magnetic multilayers. , 1993, Physical review. B, Condensed matter.

[24]  Gijs,et al.  Perpendicular giant magnetoresistance of microstructured Fe/Cr magnetic multilayers from 4.2 to 300 K. , 1993, Physical review letters.

[25]  T. Miyazaki,et al.  Giant magnetic tunneling e ect in Fe/Al2O3/Fe junction , 1995 .

[26]  Fert,et al.  Spin relaxation effects in the perpendicular magnetoresistance of magnetic multilayers. , 1995, Physical review. B, Condensed matter.

[27]  P. Bruno,et al.  Theory of interlayer magnetic coupling. , 1995, Physical review. B, Condensed matter.

[28]  Dieny,et al.  Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor. , 1995, Physical review letters.

[29]  Kinder,et al.  Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.

[30]  Berger Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.

[31]  A. Fert,et al.  Perpendicular giant magnetoresistance in magnetic multilayered nanowires , 1996 .

[32]  J. M. Daughton,et al.  Magnetic Tunneling Applied to Memory (Invited) , 1997 .

[33]  W. Pratt,et al.  Current-perpendicular (CPP) magnetoresistance in magnetic metallic multilayers , 1999 .

[34]  R. Cowburn,et al.  Room temperature magnetic quantum cellular automata , 2000, Science.

[35]  W. Black,et al.  Programmable logic using giant-magnetoresistance and spin-dependent tunneling devices (invited) , 2000 .

[36]  H. Ohno,et al.  Electric-field control of ferromagnetism , 2000, Nature.

[37]  Margaret Evans Best,et al.  High K/sub u/ materials approach to 100 Gbits/in/sup 2/ , 2000 .

[38]  Jonathan Z. Sun Spin-current interaction with a monodomain magnetic body: A model study , 2000 .

[39]  Robert A. Buhrman,et al.  Spin-polarized current switching of a Co thin film nanomagnet , 2000 .

[40]  G. Schmidt,et al.  Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor , 1999, cond-mat/9911014.

[41]  T. Schulthess,et al.  Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches , 2001 .

[42]  Albert Fert,et al.  Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor , 2001 .

[43]  A. Umerski,et al.  Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction , 2001 .

[44]  B. V. van Wees,et al.  Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve , 2001, Nature.

[45]  Gang Xiong,et al.  Submicrometer Ferromagnetic NOT Gate and Shift Register , 2002, Science.

[46]  Hitoshi Iwasaki,et al.  The applicability of CPP-GMR heads for magnetic recording , 2002 .

[47]  S. Maekawa,et al.  Spin-dependent transport in magnetic nanostructures , 2002, cond-mat/0307050.

[48]  P. Leclair,et al.  Large magnetoresistance in hybrid spin filter devices , 2002 .

[49]  Burkard Hillebrands,et al.  Spin Dynamics in Confined Magnetic Structures III , 2002 .

[50]  J. Slaughter,et al.  A low power 1 Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects , 2002, 2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302).

[51]  S. Parkin,et al.  Room temperature operation of a high output current magnetic tunnel transistor , 2002 .

[52]  Eric E. Fullerton,et al.  Magnetic recording: advancing into the future , 2002 .

[53]  M. Hehn,et al.  Hot-electron three-terminal devices based on magnetic tunnel junction stacks , 2002 .

[54]  K. H. Ploog,et al.  Programmable computing with a single magnetoresistive element , 2003, Nature.

[55]  Dominique Givord,et al.  Beating the superparamagnetic limit with exchange bias , 2003, Nature.

[56]  G. Faini,et al.  Switching a spin valve back and forth by current-induced domain wall motion , 2003 .

[57]  Jacques Miltat,et al.  Faster magnetic walls in rough wires , 2003, Nature materials.

[58]  J. C. Sloncxewski,et al.  Current-driven excitation of magnetic multilayers , 2003 .

[59]  Thomas F. Boggess,et al.  Non-magnetic semiconductor spin transistor , 2003 .

[60]  E. Fullerton,et al.  The energy barriers in antiferromagnetically coupled media , 2003 .

[61]  Teruo Ono,et al.  Dynamics of a magnetic domain wall in magnetic wires with an artificial neck , 2003 .

[62]  A. Pohm,et al.  Design of Curie point written magnetoresistance random access memory cells , 2003 .

[63]  D. Mailly,et al.  Switching of magnetization by nonlinear resonance studied in single nanoparticles , 2003, Nature materials.

[64]  N. Sakimura,et al.  A 512kb cross-point cell MRAM , 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..

[65]  A. Anane,et al.  Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments , 2003 .

[66]  G. Tatara,et al.  Theory of current-driven domain wall motion: spin transfer versus momentum transfer. , 2004, Physical review letters.

[67]  D Chiba,et al.  Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction. , 2004, Physical review letters.

[68]  Eiji Saitoh,et al.  Current-induced resonance and mass determination of a single magnetic domain wall , 2004, Nature.

[69]  D. Ralph,et al.  The Kondo Effect in the Presence of Ferromagnetism , 2004, Science.

[70]  H. Hoenigschmid,et al.  A high-speed 128-kb MRAM core for future universal memory applications , 2004, IEEE Journal of Solid-State Circuits.

[71]  Russell P. Cowburn,et al.  Artificial domain wall nanotraps in Ni81Fe19 wires , 2004 .

[72]  H. Ohno,et al.  Current-induced domain-wall switching in a ferromagnetic semiconductor structure , 2004, Nature.

[73]  Y. Huai,et al.  Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions , 2004, cond-mat/0504486.

[74]  Claude Chappert,et al.  Domain wall displacement induced by subnanosecond pulsed current , 2004 .

[75]  S. Nasu,et al.  Real-space observation of current-driven domain wall motion in submicron magnetic wires. , 2003, Physical review letters.

[76]  D. Worledge,et al.  Spin flop switching for magnetic random access memory , 2004 .

[77]  A. Panchula,et al.  Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers , 2004, Nature materials.

[78]  Z Li,et al.  Domain-wall dynamics and spin-wave excitations with spin-transfer torques. , 2004, Physical review letters.

[79]  R. Cowburn,et al.  Domain wall diodes in ferromagnetic planar nanowires , 2004 .

[80]  Electrical spin injection in multiwall carbon nanotubes with transparent ferromagnetic contacts , 2004, cond-mat/0411623.

[81]  S. Yuasa,et al.  Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions , 2004, Nature materials.

[82]  B. Dieny,et al.  Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions , 2004, IEEE Transactions on Magnetics.

[83]  G. Schmidt,et al.  Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer. , 2004, Physical review letters.

[84]  R. W. Dave,et al.  A 4-Mb toggle MRAM based on a novel bit and switching method , 2005, IEEE Transactions on Magnetics.

[85]  J A C Bland,et al.  Direct observation of domain-wall configurations transformed by spin currents. , 2005, Physical review letters.

[86]  Y. Otani,et al.  Estimation of spin-diffusion length from the magnitude of spin current absorption , 2005 .

[87]  D Petit,et al.  Magnetic Domain-Wall Logic , 2005, Science.

[88]  Y Suzuki,et al.  Micromagnetic understanding of current-driven domain wall motion in patterned nanowires , 2005 .

[89]  Elizabeth K. Reilly,et al.  Electric field-induced magnetization switching in epitaxial columnar nanostructures. , 2005, Nano letters.

[90]  Jordi Sort,et al.  Exchange bias in nanostructures , 2005 .

[91]  M. Hosomi,et al.  A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[92]  D. Lacour,et al.  Nanometer scale observation of high efficiency thermally assisted current-driven domain wall depinning. , 2005, Physical review letters.

[93]  T. Zhao,et al.  Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature , 2006, Nature materials.

[94]  Stuart S. P. Parkin,et al.  Oscillatory dependence of current-driven magnetic domain wall motion on current pulse length , 2006, Nature.

[95]  T. Marukame,et al.  High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film , 2006 .

[96]  D. Mills,et al.  Nanomagnetism : ultrathin films, multilayers and nanostructures , 2006 .

[97]  A Imre,et al.  Majority Logic Gate for Magnetic Quantum-Dot Cellular Automata , 2006, Science.

[98]  A. Fert,et al.  Spin transfer experiments on ( Ga , Mn ) As ∕ ( In , Ga ) As ∕ ( Ga , Mn ) As tunnel junctions , 2006 .

[99]  C. Tsang,et al.  Fabrication and Recording Study of All-Metal Dual-Spin-Valve CPP Read Heads , 2006, IEEE Transactions on Magnetics.

[100]  M Yamanouchi,et al.  Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As. , 2006, Physical review letters.

[101]  Kinam Kim,et al.  Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node , 2006, 2006 International Electron Devices Meeting.

[102]  H. Ohno,et al.  Electric-field control of ferromagnetism in (Ga,Mn)As , 2006 .

[103]  T. Kimura,et al.  Switching magnetization of a nanoscale ferromagnetic particle using nonlocal spin injection. , 2006, Physical review letters.

[104]  Luc Thomas,et al.  Dependence of current and field driven depinning of domain walls on their structure and chirality in permalloy nanowires. , 2006, Physical review letters.

[105]  Kimberley C. Hall,et al.  Performance of a spin-based insulated gate field effect transistor , 2006 .

[106]  J. Otani,et al.  A high-density and high-speed 1T-4MTJ MRAM with Voltage Offset Self-Reference Sensing Scheme , 2006, 2006 IEEE Asian Solid-State Circuits Conference.

[107]  Claude Chappert,et al.  Micromagnetic simulation of spin transfer torque switching combined with precessional motion from a hard axis magnetic field , 2006 .

[108]  Zhanjie Li,et al.  Current-driven vortex domain wall dynamics by micromagnetic simulations , 2006, cond-mat/0605125.

[109]  S. Bournat,et al.  Thermal Select MRAM with a 2-bit Cell Capability for beyond 65 nm Technology Node , 2006, 2006 International Electron Devices Meeting.

[110]  Takayuki Ishikawa,et al.  Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier , 2006 .

[111]  M. Gubbins,et al.  Commercial TMR heads for hard disk drives: characterization and extendibility at 300 gbit/in/sup 2/ , 2006, IEEE Transactions on Magnetics.

[112]  Mathias Kläui,et al.  Current-induced vortex nucleation and annihilation in vortex domain walls , 2006 .

[113]  Shoji Ikeda,et al.  Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer , 2006 .

[114]  Teruo Ono,et al.  Current-driven resonant excitation of magnetic vortices. , 2006, Physical review letters.

[115]  E. Belhaire,et al.  Integration of Spin-RAM technology in FPGA circuits , 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

[116]  Cock Lodder,et al.  Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets , 2006, Nature materials.

[117]  Multiferroics: different ways to combine magnetism and ferroelectricity , 2006, cond-mat/0601696.

[118]  J. Wunderlich,et al.  Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor. , 2006, Physical review letters.

[119]  C. Chappert,et al.  Subnanosecond spin-transfer switching : Comparing the benefits of free-layer or pinned-layer biasing , 2007 .

[120]  H. Jaffres,et al.  Semiconductors Between Spin-Polarized Sources and Drains , 2007, IEEE Transactions on Electron Devices.

[121]  S. Ikeda,et al.  Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier , 2007 .

[122]  L. J. Sham,et al.  Spin-based logic in semiconductors for reconfigurable large-scale circuits , 2007, Nature.

[123]  S. J. Hermsdoerfer,et al.  Microwave assisted switching in a Ni81Fe19 ellipsoid , 2007 .

[124]  W. Wenzel,et al.  Charge-switchable molecular magnet and spin blockade of tunneling , 2007 .

[125]  M. Tanaka,et al.  MOS-Based Spin Devices for Reconfigurable Logic , 2007, IEEE Transactions on Electron Devices.

[126]  Luc Thomas,et al.  Current driven domain wall velocities exceeding the spin angular momentum transfer rate in permalloy nanowires. , 2007, Physical review letters.

[127]  Luc Thomas,et al.  Resonant Amplification of Magnetic Domain-Wall Motion by a Train of Current Pulses , 2007, Science.

[128]  R. Takemura,et al.  2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[129]  J. Zavada,et al.  Electrical Manipulation of Nonvolatile Spin Cell Based on Diluted Magnetic Semiconductor Quantum Dots , 2007, IEEE Transactions on Electron Devices.

[130]  Transformation of spin information into large electrical signals using carbon nanotubes , 2005, Nature.

[131]  G. Schmidt,et al.  Tunneling Anisotropic Magnetoresistance-Based Devices , 2007, IEEE Transactions on Electron Devices.

[132]  Spin transfer torque in continuous textures : Semiclassical boltzmann approach , 2006, cond-mat/0611320.

[133]  D. Ralph,et al.  Spin transfer torques , 2007, 0711.4608.