Monolithic transformers and their application in a differential CMOS RF low-noise amplifier

A 900 MHz low-noise amplifier (LNA) utilizing three monolithic transformers to implement on-chip tuning networks and requiring no external components has been integrated in 2.88 mm/sup 2/ in a standard digital 0.6 /spl mu/m CMOS process. A bias current reuse technique is employed to reduce power dissipation, and process-, voltage-, and temperature-tracking biasing techniques are used. At 900 MHz, the LNA dissipates 18 mW from a single 3 V power supply and provides 4.1 dB noise figure, 12.3 dB power gain, -33.0 dB reverse isolation, and an input 1-db compression level of -16 dBm. Analysis and modeling considerations for silicon-based monolithic transformers are presented, and it is shown that a monolithic transformer occupies less die area and provides a higher quality factor than two independent inductors with the same effective inductance in differential applications.

[1]  A. Boulouard,et al.  Analysis of rectangular spiral transformers for MMIC applications , 1989 .

[2]  R.P. Jindal.  Noise associated with distributed resistance of MOSFET gate structures in integrated circuits , 1984, IEEE Transactions on Electron Devices.

[3]  Jianjun Zhou,et al.  LNA utilizing Monolithic Transformers , 1998 .

[4]  Luca Selmi,et al.  Design of an X-band transformer-coupled amplifier with improved stability and layout , 1993 .

[5]  Thomas H. Lee,et al.  SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver , 1996 .

[6]  J. Long,et al.  The modeling, characterization, and design of monolithic inductors for silicon RF IC's , 1997, IEEE J. Solid State Circuits.

[7]  A. Karanicolas.  A 2.7 V 900 MHz CMOS LNA and mixer , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[8]  N. Camilleri,et al.  Bonding pad models for silicon VLSI technologies and their effects on the noise figure of RF NPNs , 1994, Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[9]  K. Jenkins,et al.  Microwave inductors and capacitors in standard multilevel interconnect silicon technology , 1996 .

[10]  R. Meyer,et al.  Si IC-compatible inductors and LC passive filters , 1990 .

[11]  C. Yue,et al.  On-chip Spiral Inductors With Patterned Ground Shields For Si-based RF IC's , 1997, Symposium 1997 on VLSI Circuits.

[12]  A.A. Abidi,et al.  High-frequency noise measurements on FET's with small dimensions , 1986, IEEE Transactions on Electron Devices.

[13]  J. R. Long,et al.  A 1.9 GHz low-voltage silicon bipolar receiver front-end for wireless personal communications systems , 1995 .

[14]  B. J. Buck,et al.  A 2.4 GHz single chip transceiver , 1993, IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[15]  A. Abidi,et al.  Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier , 1993, IEEE Electron Device Letters.

[16]  I. Bahl,et al.  Characteristics of Coupled Microstriplines , 1979 .

[17]  Janssens,et al.  A 2.7 Volt CMOS Broadband Low Noise Amplifier , 1997, Symposium 1997 on VLSI Circuits.

[18]  H. Hasegawa,et al.  Properties of Microstrip Line on Si-SiO/sub 2/ System , 1971 .

[19]  David J. Allstot,et al.  Simulation techniques and solutions for mixed-signal coupling in integrated circuits , 1994 .

[20]  A. Podell,et al.  Transformer Coupled High-Density Circuit Technique for MMIC , 1984 .

[21]  T. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996 .