Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates

Lead zirconate titanate PbZr52Ti48O3 (PZT) layers were deposited on ZnO layers by rf-sputtering at varying substrate temperatures. The effect of annealing on PZT crystal properties has been studied by X-ray diffraction and atomic force microscopy. It is shown that the annealing in oxygen ambient has significant effect on the quality of the deposited PZT layers. The optimum growth temperature has been found to be 650 C.