Accuracy of effective channel-length extraction using the capacitance method
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[1] B. Sheu,et al. A simple method to determine channel widths for conventional and LDD MOSFET's , 1984, IEEE Electron Device Letters.
[2] R. F. Motta,et al. A new method to determine MOSFET channel length , 1980, IEEE Electron Device Letters.
[3] P. Vitanov,et al. Electrical characterization of feature sizes and parasitic capacitances using a single test structure , 1984, IEEE Transactions on Electron Devices.
[4] J. J. Barnes,et al. Short-channel MOSFET's in the punchthrough current mode , 1979 .
[5] J. Verwey,et al. Fast determination of the effective channel length and the gate Oxide thickness in polycrystalline Silicon MOSFET's , 1984, IEEE Electron Device Letters.
[6] B. J. Sheu,et al. Characterization of Intrinsic Capacitances of Small-Geometry MOSFET's , 1984, 1984 Symposium on VLSI Technology. Digest of Technical Papers.
[7] R. Shrivastava,et al. A simple model for the overlap capacitance of a VLSI MOS device , 1982, IEEE Transactions on Electron Devices.
[8] B. Sheu,et al. A capacitance method to determine channel lengths for conventional and LDD MOSFET's , 1984, IEEE Electron Device Letters.
[9] Siegfried Selberherr,et al. MINIMOS—A two-dimensional MOS transistor analyzer , 1980 .
[10] S. Laux,et al. Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's , 1984, IEEE Transactions on Electron Devices.