Polishing of low dielectric constant (low k) organic layers of polyarylether (poly‐AE) has been studied. Removal rate of poly‐AE is 52 nm/min in polishing by slurry at pressure of . This rate is 4.2 times greater than that achieved by fumed silica slurry. This rate increase is due to the enhancement of chemical polishing through employing a chemically active slurry of . Removal rate for tantalum nitride (TaN) barrier is 97 nm/min in slurry. This rate is much greater than the 44 nm/min achieved by fumed silica slurry. Although many deep scratches are formed at the surface of the poly‐AE layer by the polishing of fumed silica slurry, no deep scratches are found at the surface polished by slurry. © 1999 The Electrochemical Society. All rights reserved.