A fully SiO/sub 2/-isolated self-aligned SOI-bipolar transistor for VLSIs

A fully functional high-speed 6K-gate SOI ECL gate array has been realized. An advanced fabrication process was developed to obtain a fully SiO/sub 2/-isolated self-aligned SOI-bipolar transistor for VLSIs. Novel temperature control techniques were also utilized. The power consumption of the VLSI is 18 W. The temperature gradient of the SOI-BJT (bipolar junction transistor) was studied by means of transistor-array measurements and three-dimensional finite-element-method simulations. The analysis suggests that the temperature rise of the SOI-BJT is about 6 degrees C/mW, which is only 3 degrees C/mW larger than that of an Si-BJT. A fully functional 6K-gate ECL gate array has been fabricated using the SOI-SEPT (selective etching of polysilicon technology) process.<<ETX>>