Reliability Study of AlGaN/GaN HEMTs Device

AlGaN/GaN HEMTs devices are studied intensely because of its ability of operation at higher voltage with higher power density. As the study progress, it is realized that the reliability of the fabricated device is a quite important issue. From the reliability study of AlGaN/GaN HEMTs, it is found that the current degradation has relationships with the isolation structure. In this paper, the differences of current degradations between two isolation methods are studied and some interpretations concerning the source of these degradations are discussed.

[1]  Suzuki Takuma,et al.  C-band AlGaN/GaN HEMTs with 170W Output Power , 2005 .

[2]  Gaudenzio Meneghesso,et al.  Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing , 1997 .

[3]  H. Minami,et al.  A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[4]  Y. Liu,et al.  The Physics of Reliability for High Voltage AlGaN/GaN HFET's , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[5]  Michael S. Shur,et al.  Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias , 1994 .

[6]  T. Nakayama,et al.  Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate , 2004, IEEE Transactions on Microwave Theory and Techniques.

[7]  S. Yokokawa,et al.  An over 200-W output power GaN HEMT push-pull amplifier with high reliability , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[8]  K. Matsunaga,et al.  C-band Single-Chip GaN-FET Power Amplifiers with 60-W Output Power , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[9]  C. G. Willison,et al.  Epitaxially-grown GaN junction field effect transistors , 2000 .

[10]  K. Takagi,et al.  X-band AlGaN/GaN HEMT with over 80W Output Power , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[11]  T. Li,et al.  Reliability of large periphery GaN-on-Si HFETs , 2005, [Reliability of Compound Semiconductors] ROCS Workshop, 2005..

[12]  Takuma Suzuki,et al.  C-band AIGaN/GaN HEMTs with 170W Output Power , 2005 .