An improved large-signal I–V model of GaN HEMT

A new large-signal I-V model for GaN HEMT is presented in this paper based on the operational principle of devices and the traditional Angelov nonlinear I-V model. The least squares method and genetic algorithm are used to optimize the parameter extraction, and MATLAB is used to realize it. The simulation result fits well with the measured data, and the extracted model parameters have certain physical significance, which shows the improved large-signal I-V model has good accuracy.

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