Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
暂无分享,去创建一个
[1] Po-Tsun Liu,et al. Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors , 2016 .
[2] S. Sung,et al. Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability. , 2014, Journal of nanoscience and nanotechnology.
[3] Jong-Wan Park,et al. Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping , 2013, Journal of Electronic Materials.
[4] V. M. Beresnev,et al. Nanocoatings Nanosystems Nanotechnologies , 2012 .
[5] S. Sung,et al. Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors , 2011 .
[6] T. Kamiya,et al. Present status of amorphous In–Ga–Zn–O thin-film transistors , 2010, Science and technology of advanced materials.
[7] Yeon-Gon Mo,et al. Novel ZrInZnO Thin‐film Transistor with Excellent Stability , 2009 .
[8] Yu-Lin Wang,et al. Indium zinc oxide thin films deposited by sputtering at room temperature , 2008 .
[9] M. Jayachandran,et al. Investigation of x-ray photoelectron spectroscopic (XPS), cyclic voltammetric analyses of WO3 films and their electrochromic response in FTO/WO3/electrolyte/FTO cells , 2006 .