Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS2-based FETs targeting RF applications.

[1]  X. Cartoixà,et al.  Short channel effects in graphene-based field effect transistors targeting radio-frequency applications , 2016, 1606.03264.

[2]  P. C. Feijoo,et al.  Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor , 2017, Nanotechnology.

[3]  Kang L. Wang,et al.  High-speed graphene transistors with a self-aligned nanowire gate , 2010, Nature.

[4]  Yun Wu,et al.  200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors. , 2016, ACS applied materials & interfaces.

[5]  A. Centeno,et al.  Graphene field effect transistors on flexible substrate: Stable process and high RF performance , 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).

[6]  J. M. Gonzalez-Medina,et al.  GFET Asymmetric Transfer Response Analysis through Access Region Resistances , 2019, Nanomaterials.

[7]  K. Shepard,et al.  Graphene Field-Effect Transistors for Radio-Frequency Flexible Electronics , 2015, IEEE Journal of the Electron Devices Society.

[8]  S. Banerjee,et al.  Embedded gate CVD MoS2 microwave FETs , 2017, npj 2D Materials and Applications.

[9]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[10]  X. Duan,et al.  High-frequency self-aligned graphene transistors with transferred gate stacks , 2012, Proceedings of the National Academy of Sciences.

[11]  Amritesh Rai,et al.  Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime , 2016, Advanced materials.

[12]  Francisco Pasadas,et al.  Erratum to “Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances” , 2016 .

[13]  R.W. Dutton,et al.  A charge-oriented model for MOS transistor capacitances , 1978, IEEE Journal of Solid-State Circuits.

[14]  Deji Akinwande,et al.  Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances , 2019, npj 2D Materials and Applications.

[15]  F. Miao,et al.  Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors , 2019, Advanced Functional Materials.

[16]  S. Hsu,et al.  Gigahertz flexible graphene transistors for microwave integrated circuits. , 2014, ACS nano.

[17]  Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances , 2016, IEEE Transactions on Electron Devices.

[18]  Deji Akinwande,et al.  Extremely High-Frequency Flexible Graphene Thin-Film Transistors , 2016, IEEE Electron Device Letters.

[19]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[20]  Jongho Lee,et al.  25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets. , 2013, ACS nano.

[21]  Wei Wei,et al.  Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances , 2017, IEEE Transactions on Electron Devices.

[22]  Gautam Gupta,et al.  Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. , 2014, Nature materials.

[23]  Kaustav Banerjee,et al.  Electrical contacts to two-dimensional semiconductors. , 2015, Nature materials.

[24]  M. Lemme,et al.  Dielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics , 2018, ACS applied nano materials.

[25]  J. Meyer.  MOS models and circuit simulations , 1971 .

[26]  G. Fiori,et al.  Modeling of Electron Devices Based on 2-D Materials , 2018, IEEE Transactions on Electron Devices.

[27]  R. Dong,et al.  Record maximum oscillation frequency in C-face epitaxial graphene transistors. , 2013, Nano letters.

[28]  K. Banerjee,et al.  2D crystal semiconductors: Intimate contacts. , 2014, Nature materials.

[29]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[30]  Marika Schleberger,et al.  Hysteresis in the transfer characteristics of MoS2 transistors , 2017 .

[31]  S. Banerjee,et al.  Radio Frequency Transistors and Circuits Based on CVD MoS2. , 2015, Nano letters.

[32]  G. Dambrine,et al.  Flexible gigahertz transistors derived from solution-based single-layer graphene. , 2012, Nano letters.

[33]  Yusuf Leblebici,et al.  MoS2 transistors operating at gigahertz frequencies. , 2014, Nano letters.

[34]  Faisal Ahmed,et al.  Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides. , 2017, ACS nano.

[35]  Y. Rosenwaks,et al.  Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors. , 2020, Nanoscale.

[36]  Zezhao He,et al.  An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors , 2014 .

[37]  Frank Schwierz,et al.  Graphene Transistors: Status, Prospects, and Problems , 2013, Proceedings of the IEEE.

[38]  F Schwierz,et al.  Two-dimensional materials and their prospects in transistor electronics. , 2015, Nanoscale.

[39]  Danna Zhou,et al.  d. , 1840, Microbial pathogenesis.

[41]  M. Eremets,et al.  Ammonia as a case study for the spontaneous ionization of a simple hydrogen-bonded compound , 2014, Nature Communications.