A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology

A balanced Colpitts voltage-controlled oscillator (VCO) is designed and fabricated in a commercially available 0.25-/spl mu/m SiGe BiCMOS process. It has the characteristics of the push-push VCO, i.e., the VCO has simultaneously a differential output at a fundamental frequency of 21.5 GHz and a single-ended output at the second harmonic frequency of 43 GHz. A differential tuning technique is applied to reduce the phase noise. The measured phase noise at 1-MHz offset is -113 dBc/Hz at 21.5 GHz and -107 dBc/Hz at 43 GHz. The corresponding output power is about -6 and -17 dBm, respectively, with a 5% tuning range and a 130-mW dc power consumption.

[1]  Ali Hajimiri,et al.  A noise-shifting differential Colpitts VCO , 2002, IEEE J. Solid State Circuits.

[2]  A. Stelzer,et al.  Single-chip 20-GHz VCO and frequency divider in SiGe technology , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[3]  Jong-Heon Kim,et al.  K-band hair-pin resonator oscillators , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[4]  F. X. Sinnesbichler.  Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs , 2003 .

[5]  Peter R. Kinget,et al.  Integrated GHz Voltage Controlled Oscillators , 1999 .

[6]  Duixian Liu,et al.  A 1 V 3.8-5.7 GHz differentially-tuned VCO in SOI CMOS , 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).

[7]  D. Leeson.  A simple model of feedback oscillator noise spectrum , 1966 .

[8]  Hans-Martin Rein,et al.  Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology , 2003, IEEE J. Solid State Circuits.

[9]  Songcheol Hong,et al.  Ku-band InGaP-GaAs HBT MMIC VCOs with balanced and differential topologies , 2004 .

[10]  Arpad L. Scholtz,et al.  A 28-GHz monolithic integrated quadrature oscillator in SiGe bipolar technology , 2003 .

[11]  Songcheol Hong,et al.  A Ku band InGaP/GaAs HBT MMIC VCO with a balanced and a differential topologies , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[12]  H. Rein,et al.  47 GHz VCO with low phase noise fabricated in a SiGe bipolar production technology , 2002, IEEE Microwave and Wireless Components Letters.

[13]  D. Marchesan,et al.  A family of monolithic inductor-varactor SiGe-HBT VCOs for 20 GHz to 30 GHz LMDS and fiber-optic receiver applications , 2000, 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).

[14]  J.-F. Luy,et al.  47 GHz SiGe-MMIC oscillator , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[15]  M. Tiebout,et al.  Low-power low-phase-noise differentially tuned quadrature VCO design in standard CMOS , 2001, IEEE J. Solid State Circuits.

[16]  W. Heinrich,et al.  38 GHz push-push GaAs-HBT MMIC oscillator , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[17]  Hans-Martin Rein,et al.  A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits , 2002 .