A 2.7 V 900 MHz/1.9 GHz dual-band transceiver IC for digital wireless communication

A 2.7 V 900 MHz/1.9 GHz dual-band transceiver IC consisting of receive, transmit and local oscillator sections is presented. The transmit section achieves an unwanted sideband-suppression of -43 dBc, LO leakage of -59 dBc, 3/sup rd/ order spurious rejection of -70 dBc. The transmit output noise level is -165 dBc/Hz at a 20 MHz offset from the carrier. The on-chip VHF oscillator has a phase noise level of -106 dBc/Hz at 100 kHz offset when operating at 800 MHz. The receive section has 36 dB of gain with 36 dB of gain range in 4 steps.

[1]  Invited Paw,et al.  Injection Locking of Microwave Solid-State Oscillators , 1973 .

[2]  J. H. Havens,et al.  A 2.7 V to 4.5 V single-chip GSM transceiver RF integrated circuit , 1995 .

[3]  J. Crois,et al.  A fully integrated 900 MHz CMOS double quadrature downconverter , 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.

[4]  C.D. Hull,et al.  A direct-conversion receiver for 900 MHz (ISM band) spread-spectrum digital cordless telephone , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[5]  T. Endo,et al.  A 2.7 V GSM RF transceiver IC , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.