Extraordinary transmission through gain-assisted silicon-based nanohole arrays at telecommunication regime

After discovery of extraordinary transmission (EOT) subwavelength hole arrays structures patterned on a metal film have generated wide interest as they offer high optical transmission and strong localized electric near-field intensities. However, the large ohmic losses exhibited by SPs in the optical regime represent a fundamental limitation that reduces drastically the practical applicability of EOT properties. Furthermore, not compatible with silicon platform make it difficult for application purposes. As a possible solution to this fundamental problem, gain medium have been introduced to compensate the loss created by metallic film. But the most important yet challenging requirements for gain material are to be silicon compatible and working at telecommunication regime. The aim of this paper is to theoretically study optical amplification of EOT properties in periodic hole arrays incorporating optically pumped gain media. The gain media was selected Erbium/Ytterbium(Er/Yb) silicate that is silicon compatible with photoluminescence peak at telecommunication regime. Use of Er3+ ions has the advantages of proven, stable, and low-noise operation at the technologically important 1.54 m region. To excite the active material a laser with a maximum power of 372 mW at the wavelength of 1480 nm is applied. Geometrical parameters was obtained by solving the surface plasmon dispersion relation on periodic hole arrays. The condition for lossless propagation was obtained analytically. Simulation results shows that for lossless propagation we will need higher gain value. By considering higher gain values the absorption was approached to zero 30% transmission enhancements was observed at telecommunication wavelength.