Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding

Low-threshold room-temperature pulsed operation of InGaAs-InGaAsP multiquantum-well (MQW) lasers ( lambda approximately=1.55 mu m) on Si substrates is demonstrated. These laser structures were first grown on InP substrates, then bonded at 700 degrees C onto Si substrates with buffer layers. The mesa-stripe broad-area lasers have a threshold current density of 1.7 kA/cm/sup 2/ (50 mu m mesa width, 330 mu m cavity length), which is comparable to the value for lasers on InP substrates.