Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation
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[1] E. Rosseel,et al. Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−x Sn x and Si y Ge1−x−y Sn x , 2020 .
[2] G. Pourtois,et al. Heavily phosphorus doped germanium: Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation , 2019, Journal of Applied Physics.
[3] G. Pourtois,et al. Evolution of phosphorus-vacancy clusters in epitaxial germanium , 2019, Journal of Applied Physics.
[4] R. Loo,et al. Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence , 2016 .
[5] A. Hikavyy,et al. On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films , 2016 .
[6] Giordano Scappucci,et al. Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities. , 2013, ACS nano.
[7] J. Vanhellemont,et al. Surface-induced charge at a Ge (100) dimer surface and its interaction with vacancies and self-interstitials , 2013 .
[8] E. Simoen,et al. On the diffusion and activation of n-type dopants in Ge , 2012 .
[9] J. Vanhellemont,et al. Ab initio analysis of a vacancy and a self‐interstitial near single crystal silicon surfaces: Implications for intrinsic point defect incorporation during crystal growth from a melt , 2012 .
[10] Bing Xiao,et al. Communication: Effect of the orbital-overlap dependence in the meta generalized gradient approximation. , 2012, The Journal of chemical physics.
[11] J. M. Fedeli,et al. Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers , 2012 .
[12] J. Vanhellemont,et al. Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces , 2012 .
[13] Miguel A. L. Marques,et al. Libxc: A library of exchange and correlation functionals for density functional theory , 2012, Comput. Phys. Commun..
[14] E. Kamiyama,et al. First principles analysis on interaction between vacancy near surface and dimer structure of silicon crystal , 2012 .
[15] H. Bracht,et al. Diffusion of E centers in germanium predicted using GGA+U approach , 2011 .
[16] A. Chroneos. Dopant-vacancy cluster formation in germanium , 2010 .
[17] B. Uberuaga,et al. Vacancy-mediated dopant diffusion activation enthalpies for germanium , 2008 .
[18] H. Bracht,et al. Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium , 2008 .
[19] Joost VandeVondele,et al. Gaussian basis sets for accurate calculations on molecular systems in gas and condensed phases. , 2007, The Journal of chemical physics.
[20] J. Vanhellemont,et al. On the solubility and diffusivity of the intrinsic point defects in germanium , 2007 .
[21] E. Simoen,et al. Brother Silicon, Sister Germanium , 2006, ECS Transactions.
[22] Matthias Krack,et al. Pseudopotentials for H to Kr optimized for gradient-corrected exchange-correlation functionals , 2005 .
[23] Michele Parrinello,et al. Quickstep: Fast and accurate density functional calculations using a mixed Gaussian and plane waves approach , 2005, Comput. Phys. Commun..
[24] S. Dunham,et al. Atomistic models of vacancy‐mediated diffusion in silicon , 1995 .
[25] Jan Almlöf,et al. General methods for geometry and wave function optimization , 1992 .
[26] S. Gates,et al. Kinetics of surface reactions in very low‐pressure chemical vapor deposition of Si from SiH4 , 1991 .
[27] S. Gates,et al. Surface reactions in Si chemical vapor deposition from silane , 1990 .
[28] S. Gates,et al. Decomposition of silane on Si(111)‐(7×7) and Si(100)‐(2×1) surfaces below 500 °C , 1990 .
[29] S. Hu. On Interaction Potential, Correlation Factor, Vacancy Mobility, and Activation Energy of Impurity Diffusion in Diamond Lattice , 1973 .
[30] K. Sueoka,et al. Systematic Density Functional Theory Investigation of Stability of Dopant Atoms in Ge Ultra-Thin Film Grown on Si Substrate , 2017 .
[31] Jean-Michel Hartmann,et al. Very Low Temperature Epitaxy of Heavily In Situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers , 2017 .
[32] Joost VandeVondele,et al. cp2k: atomistic simulations of condensed matter systems , 2014 .
[33] J. Vanhellemont,et al. Formation Energy of Intrinsic Point Defects in Si and Ge and Implications for Ge Crystal Growth , 2013 .