A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

We report a photodiode on InP substrate with a cutoff wavelength of 2.39 /spl mu/m and peak room-temperature external quantum efficiency of 43% at 2.23 /spl mu/m. Type-II GaInAs-GaAsSb quantum wells lattice-matched to InP were placed in the absorption region for long wavelength absorption. The device showed a peak detectivity of 5.6/spl times/10/sup 10/ cm/spl radic/HzW/sup -1/ at 200 K.

[1]  Van de Walle Cg.  Band lineups and deformation potentials in the model-solid theory. , 1989 .

[2]  J. Phillips,et al.  Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy , 2003 .

[3]  Y. Kawamura,et al.  Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxy , 1999 .

[4]  A. Holmes,et al.  GaAsSb: a novel material for near infrared photodetectors on GaAs substrates , 2002 .

[5]  Morio Wada,et al.  Wide wavelength and low dark current lattice‐mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor‐phase epitaxy , 1994 .

[6]  A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array , 2002 .

[7]  J.C. Campbell,et al.  Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product , 1998, IEEE Photonics Technology Letters.

[8]  James D. Garnett,et al.  Mid-wavelength infrared p-on-n Hg1−xCdxTe heterostructure detectors: 30–120 kelvin state-of-the-Art performance , 2003 .

[9]  S. Forrest,et al.  In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling , 1980 .

[10]  GaAsSb resonant-cavity-enhanced avalanche photodiode operating at 1.06 /spl mu/m , 2004, The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004..

[11]  Y. Kawamura,et al.  Photoluminescence properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP , 2000 .

[12]  Van de Walle CG.  Band lineups and deformation potentials in the model-solid theory. , 1989, Physical review. B, Condensed matter.

[13]  J. C. Dries,et al.  Strain compensated In/sub 1-x/Ga/sub x/As (x<0.47) quantum well photodiodes for extended wavelength operation , 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

[14]  J. C. Dries,et al.  Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation , 1998 .

[15]  Martin Walther,et al.  InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection , 1998, Photonics West.