论文信息 - Circuit performance of low temperature CMOS polysilicon TFT operational amplifiers

Circuit performance of low temperature CMOS polysilicon TFT operational amplifiers

CMOS polysilicon TFT opamps have been designed and fabricated on glass by a low temperature (620°C) process. A poly-Si SPICE circuit model is employed to optimise bias conditions. Results of tested opamps are presented.

Haigang Yang | Carlo Reita | Piero Migliorato | S. Fluxman

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