论文信息 - P‐15: Retarded Photoreaction Reversibility of a‐IZO TFT for Light Sensor Applications

P‐15: Retarded Photoreaction Reversibility of a‐IZO TFT for Light Sensor Applications

The retarded photoreaction reversibility of a-IZO TFT has been discussed in this work. with a small DC voltage bias, the reaction was speeded up and the electrical characteristics were recovered back to the fresh state. The Vth shifting behavior possesses the potential for the light sensor applications in display technologies.

[1] S. Studenikin,et al. Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films , 2000 .

[2] R. B. McQuistan,et al. Relationship between photodesorption and surface conductivity in ZnO , 1977 .

[3] Jerzy Kanicki,et al. Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays , 1998 .

[4] Y. Takahashi,et al. Photoconductivity of Ultrathin Zinc Oxide Films , 1994 .

[5] Randy Hoffman,et al. Transparent thin-film transistors with zinc indium oxide channel layer , 2005 .

[6] Benjamin J. Norris,et al. ZnO-based transparent thin-film transistors , 2003 .

[7] Hideo Hosono,et al. P‐13: Photosensitivity of Amorphous IGZO TFTs for Active‐Matrix Flat‐Panel Displays , 2008 .

[8] R. Keezer. Effect of Chemisorbed Oxygen on Photovoltaic and Photoconductive Processes in Rutile , 1964 .