论文信息 - MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition - 字舞流文

MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition

Tadahiro Ohmi | Shigetoshi Sugawa | Tetsuya Goto | Akinobu Teramoto | Hiroyuki Sakurai | Masaki Hirayama | Ichirou Takahashi | T. Ohmi | S. Sugawa | A. Teramoto | T. Goto | M. Hirayama | Tatsunori Isogai | Kiyoshi Funaiwa | Tomoya Tsunoda | I. Takahashi | T. Isogai | H. Sakurai | Kiyoshi Funaiwa | T. Tsunoda