论文信息 - In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices

In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices

We demonstrate a post-growth in-situ chlorine passivation for suppressing surface-dominant transport in Si nanowires (SiNWs). The leakage current of bridged SiNWs suppressed more than five orders of magnitude as a result of chlorine passivation while the shape and structural properties of the bridging NWs remain unaffected by the post-growth in-situ HCl passivation. The chlorine passivated SiNW surfaces were found to be beneficial to enhance the high immunity to environmental degradation.

Ja-Yeon Kim | Min-Ki Kwon | Logeeswaran V. J. | Sonia Grego | M. Saif Islam

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