A novel bias‐dependent rational model for MESFET and HEMT devices
暂无分享,去创建一个
[1] Yoji Ohashi,et al. An approach to determining an equivalent circuit for HEMTs , 1995 .
[2] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .
[3] Manfred Berroth,et al. High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .
[4] I. Angelov,et al. Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .
[5] Naofumi Okubo,et al. GaAs MESFET characterization using least squares approximation by rational functions , 1993 .
[6] Dominique Schreurs,et al. Consistent small-signal and large-signal extraction techniques for heterojunction FET's , 1995 .
[7] Alessandro Trifiletti,et al. A new algorithm to extract the nonlinear model of MESFETS and HEMTS , 1999 .
[8] Thomas J. Brazil,et al. A scalable general-purpose model for microwave FETs including DC/AC dispersion effects , 1997 .
[9] Naofumi Okubo,et al. A new empirical large-signal HEMT model , 1996 .
[10] T. Fernandez,et al. Extracting a bias-dependent large signal MESFET model from pulsed I/V measurements , 1996 .
[11] D. J. Skellern,et al. A technique for modelling S-parameters for HEMT structures as a function of gate bias , 1992 .
[12] Shen-Whan Chen,et al. An accurately scaled small-signal model for interdigitated power P-HEMT up to 50 GHz , 1997 .
[13] D. J. Skellern,et al. Modelling drain and gate dependence of HEMT 1-50 GHz, small-signal S-parameters, and d.c. drain current , 1995 .
[14] H.-O. Vickes. Determination of intrinsic FET parameters using circuit partitioning approach , 1991 .
[15] E. Legros,et al. Very high-frequency small-signal equivalent circuit for short gate-length InP HEMTs , 1997 .
[16] T. Tanimoto. Analytical nonlinear HEMT model for large signal circuit simulation , 1996 .