论文信息 - Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEED - 字舞流文

Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEED

H. Saito | M. Ohishi | K. Ohmori | Hiroshi Torihara | Yasunori Fujisaki

[1] Y. Miyanagi,et al. Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation , 1990 .

[2] T. Fukada,et al. Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameter , 1990 .

[3] A. Suzuki,et al. Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxy , 1990 .

[4] M. Tamargo,et al. Reflection high-energy electron diffraction electron-stimulated desorption from ZnSe(100)(2×1)-Se surfaces , 1989 .

[5] H. Saito,et al. Photo-assisted MBE growth of ZnSe crystals , 1989 .

[6] N. Giles,et al. p‐type CdTe epilayers grown by photoassisted molecular beam epitaxy , 1986 .

[7] B. Joyce,et al. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements , 1985 .