Novel high-density infrared Schottky charge-coupled detector array

Silicon-infrared (IR) detector arrays normally consist of Schottky barrier detector elements connected via transfer gates to conventional charge-coupled device (CCD) shift registers. A novel device structure is described which incorporates both the detection and shift register functions into a single Schottky element. Advantages include the greatly increased detector fill factor and the possibility of constructing much larger detector arrays on a chip of given size.