Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers

GaInAsSb/AlGaAsSb injection lasers have been fabricated with increased Al concentration in the cladding layers. As a result of improved optical and electrical confinement, the threshold current density Jth for these double heterostructures was a factor of two lower than reported previously; CW operation was achieved up to 235 K.