论文信息 - Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's

Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's

The authors describe a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFET's. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFET's whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes account of quantum confinement in the silicon narrow channel, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.

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