论文信息 - Growth of C 60 Fullerene Films on Semiconductor Surfaces

Growth of C 60 Fullerene Films on Semiconductor Surfaces

We report on a study of vacuum-deposited thin films of C 60 fullerene on Si (100) and InP (100) semiconductor surfaces. The film morphology and C 60 —substrate interactions were investigated by using atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR). For the film deposition, both patterned Si aand InP surfaces were used. It was found that the stronger interactions occur between C 60 molecules and Si surface, than between C 60 molecules and InP surface. On InP surface with microrelief of parallel V-grooves oriented in [011] direction, C 60 films grow preferentially above the groove walls, with C 60 grains arrayed in the direction perpendicular to the groove axis.

E. Basiuk | J. Saniger | J. Bañuelos | A. Esparza

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