论文信息 - First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices - 字舞流文

First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices

M. Rosmeulen | S. Ramesh | F. Sebaai | L. Nyns | A. Arreghini | Y. Oniki | L. Breuil | J. Stiers | F. Schleicher | K. Katcko | A. Ajaykumar | J. Soulie | G. V. den bosch