论文信息 - Characterization of deep levels in a mesa-type HgCdTe IR detector

Characterization of deep levels in a mesa-type HgCdTe IR detector

The relationships between the figure of merit R0A representing the junction property and deep levels representing electric properties of semiconductors have been investigated. R0A can be estimated by current-voltage (I- V) measurements. Deep levels can be estimated using spectral analysis of deep level transient spectroscopy (SADLTS). It has been confirmed that values of activation energies concentrate around 30 meV with the increase of R0A. This suggests that the influence from the inherent deep levels in the HgCdTe device becomes strong due to the increase of R0A, resulting in the improvement of the diode characteristics.

[1] D. Lang. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[2] David G. Seiler,et al. Magneto‐optical investigation of impurity and defect levels in HgCdTe alloys , 1990 .

[3] Jun Morimoto,et al. Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) , 1987 .

[4] C. E. Jones,et al. Deep level transient spectroscopy in Hg1−xCdxTe , 1980 .

[5] M. C. Chen,et al. Observation of a deep level in p‐type Hg0.78Cd0.22Te with high dislocation density , 1992 .

[6] S. Provencher. CONTIN: A general purpose constrained regularization program for inverting noisy linear algebraic and integral equations , 1984 .

[7] S. Provencher. A constrained regularization method for inverting data represented by linear algebraic or integral equations , 1982 .