Degradation of CW GaAs double-heterojunction lasers at 300 K
暂无分享,去创建一个
B. W. Hakki | L. A. D'Asaro | B. C. De Loach | L. D’asaro | B. Hakki | R. Hartman | R. L. Hartman | B. C. D. Loach
[1] L. R. Weisberg,et al. Permanent degradation of GaAs tunnel diodes , 1964 .
[2] B. Miller,et al. Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation , 1972 .
[3] R. L. Longini. Rapid zinc diffusion in gallium arsenide , 1962 .
[4] H. Rupprecht,et al. X‐Ray Analysis of Diffusion‐Induced Defects in Gallium Arsenide , 1966 .
[5] H. Kressel,et al. Physical basis of noncatastrophic degradation in GaAs injection lasers , 1969 .
[6] M. S. Abrahams,et al. Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation , 1970 .
[7] D. Lee,et al. Ion implanted X-band IMPATT/TRAPATT back-to-back diodes , 1973 .
[8] M. S. Abrahams,et al. Dislocations and brittle fracture in elemental and compound semiconductors , 1960 .
[9] Robert L. Hartman,et al. Strain‐induced degradation of GaAs injection lasers , 1973 .