Donor incorporation properties in an n-type modulation-doped beam-expander-integrated laser fabricated by shadow-mask growth
暂无分享,去创建一个
[1] K. Uomi,et al. Wide-temperature-range operation of 1.3-μm beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask , 1996, IEEE Photonics Technology Letters.
[2] Mitsuru Ekawa,et al. Tapered thickness MQW waveguide BH MQW lasers , 1994, IEEE Photonics Technology Letters.
[3] Kazuhisa Uomi,et al. Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. I. Theory , 1990 .
[4] M. Ekawa,et al. Effect of incorporation efficiency on dopant behaviors in selective-area metalorganic vapor phase epitaxy , 1997 .
[5] Makoto Suzuki,et al. Silicon shadow mask MOVPE for in-plane thickness control of structures , 1997 .